1214-32L ADPOW | Alldatasheet
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- Manufacturer or author: kathyf
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ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-32L
32 Watts, 36 Volts
Pulsed Radar at 1.2-1.4 GHz GENERAL DESCRIPTION The 1214-32L is an internally matched, COMMON BASE transistor capable of providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width, 20% duty factor across the band 1200 to 1400 MHz. This hermetically solder - sealed transistor is specifically designed for L -Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25 °C1 125 W Maximum Voltage and Current Collector to Base Voltage (BV ces) 50 V Emitter to Base Voltage (BV ebo) 3.5 V Collector Current (I c) 5 A Maximum Temperatures Storage Tempe rature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output F = 1200-1400 MHz 32 41 W Pg Power Gain Pin = 5.3 W 7.8 8.9 dB η c Collector Efficiency Pulse Width = 5 mS 42 45 % RL Return Loss Duty Factor = 20% -9 dB Pd Pulse Droop 0.5 dB VSWR1 Load Mismatch Tolerance 1 F=1200 MHz, Pin=5.3 W 3.0:1 FUNCTIONAL CHARACTERISTICS @ 25 °C BVebo Emitter to Base Breakdown Ie = 15 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 100 mA 50 V hFE DC – Current Gain Vce = 5V, Ic = 1A 20 θ jc1 Thermal Resistance 1.4 °C/W NOTES: 1. Pulse condition of 5 mS, 20% Rel 5: March 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-32L Performance Curves Power Output vs Power Input Efficiency vs Power Input Input Impedance Load Impedance Impedance Freq Zs Zl 1300 3-j3.5 8.5-j1.44 1400 3.3-j3.7 9.07-j0.08 P/N 1214-32L. Die 7411505-G2801-5, Fix 4514 Pin (W) Pout (W)
1200 MHz
1300 MHz
1400 MHz
0.0 10.0 20.0 30.0 40.0 50.0 60.0 Power Input Efficiency Input Impedance vs Frequency 0.5 1.5 2.5 3.5
1200 MHz 1300 1400
Zs = R - jXs Rin jXin Load Impedance vs Frequency 1200 1300 1400 Frequency - MHz Zl = Rl - jXl Rl -jxl
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-32L
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-32L