1214-300 ADPOW | Alldatasheet
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- Manufacturer or author: GHz Technology Inc
- PDF pages: 3
Technical content
Vid Power . 1214 - 300 TECHNOLOGY RF
300 Watts - 50 Volts, 100u1s, 10%
GENERAL DESCRIPTION CASE OUTLINE The 1214-300 is an intemally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred 55KT, STYLE 1 microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C 1458 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 17 Amps Maximum Temperatures Storage Temperature = 65 to + 200°C Operating Junction Temperature + 200°C ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL | CHARACTERISTICS TEST CONDITIONS | MIN MAX | UNITS Pout Power Out ( Note 2) F = 1200-1400 MHz 270 Watts Pin Power Input Vee = 50 Volts 42.7. | Watts Pg Power Gain Pulse Width = 100 tts 8.0 dB ne Collector Efficiency Duty = 10% 45 % VSWR! Load Mismatch Tolerance F = 1400MHz, Po 3:1 =270W BVces Collector to Emitter Breakdown | Ic = 50 mA 65 Volts BVebo Emitter to Base Breakdown Ie =25 mA 3.0 Volts Hfe DC Current Gain Vee =5 V,Io=5 mA 10 | 45 Gje! ‘Thermal Resistance Rated Pulse Condition 0.25 | “c/w Note 1: Pulse condition of 100psec, 10%. Note 2: Product Selected to 300 Watt minimum is available, please contact the factory for details. Issue December, 1994
VA POWER , TECHNOLOGY RF POWER OUTPUT vs POWER INPUT POWER OUPUT AND EFF. vs FREQUENCY Vee = 50 V, PW = 100 us, 10% Vee = $0 V, Pin = 40 W, 100 us, 10% 350 = 350 0 ee) 300 et 300 — oo = a os Fa] gz 250 aie Z* rs a 50 z = 200 Wa Z 200 40 g z 150 Moe z 150 30 4
5 J 2
5 100 oA 7 & 100 0 x Sco Ae 100M 50 BE revere 10 ~ wens } “ae tg 0 615-2025 80S MS 1150 1200 1250 13001350 14001450 PIN (WATTS) FREQUENCY (MHz) INPUT IMPEDANCE vs FREQUENCY LOAD IMPEDANCE vs FREQUENCY Zin = R + jX (Vee = SOV, Po = 300W) Zcl = Rel - jXel (Vee = SOV, Po = 300W) 3 6 28 = 0 | @— Ra(onns) — acon —— % = comes) | 4 ? Sa ae! a3 > * z , = Zus af 3 3
2 S = 3
° = F-| <= 51 +t = 3g m1 a % > < — Lege o - 1150 120012501300 138014001450 1150 12001250 130013501400 1450 FREQUENCY (MHz) FREQUENCY (MHz) August 1996
v rot rt Y rey 1 ry rl Le ee roy = rf