TLP3041_V01 TOSHIBA | Alldatasheet
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TLP3041(S),TLP3042(S),TLP3043(S) 1 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation TOSHIBA PHOTOCOUPLER IRED & PHOTO -TRIAC TLP3041(S),TLP3042(S),TLP3043(S) OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY The TOSHIBA TLP3041 (S), TLP3042 (S), TLP3043 (S) consist of a zero voltage crossing turn-on photo-triac optically coupled to an infrared emitting diode in a six lead plastic DIP package. Peak Off-State Voltage : 400 V (min) Trigger LED Current : 15 mA (max) (TLP3041(S)) 10 mA (max) (TLP3042(S)) 5 mA (max) (TLP3043(S)) On-State Current : 100 mA (max) Isolation Voltage : 5000 Vrms (min) UL-recognized : UL 1577, File No.E67349 cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option (D4). Construction mechanical rating 7.62 mm pitch Standard Type 10.16 mm pitch TLPxxxxF Type Creepage Distance Clearance Insulation Thickness 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) JEDEC ― JEITA ― TOSHIBA 11-7A9S weight: 0.39g (typ.) Unit: mm 1: Anode 2: Cathode 3: N.C. 4:Terminal 1 6:Terminal 2 ZC:Zero-cross Circuit 3 4 ZC Pin Configuration (top view) Start of commercial production 1986-11
TLP3041(S),TLP3042(S),TLP3043(S) 2 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT LED Forward Current IF 50 mA Forward Current Derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C Peak Forward Current (100μs pulse, 100pps) IFP 1 A Reverse Voltage VR 5 V Power Dissipation PD 100 mW Power Dissipation Derating (Ta ≥ 25°C) ΔPD / °C −1.0 mW / °C Junction Temperature Tj 125 °C DETECTOR Off-State Output Terminal Voltage VDRM 400 V On-Stage RMS Ta = 25°C IT(RMS) 100 mA Current Ta = 70°C 50 On-State Current Derating (Ta ≥ 25°C) ΔIT / °C −1.1 mA / °C Peak On-Stage Current (100μs pulse, 120pps) ITP 2 A Peak Nonrepetitive Surge Current (PW = 10ms) ITSM 1.2 A Power Dissipation PD 300 mW Power Dissipation Derating (Ta ≥ 25°C) ΔPD / °C −4.0 mW / °C Junction Temperature Tj 115 °C Storage Temperature Range Tstg −55 to 150 °C Operating Temperature Range Topr −40 to 100 °C Lead Soldering Temperature (10 s) Tsol 260 °C Total Package Power Dissipation PT 330 mW Total Package Power Dissipation Derating (Ta ≥ 25°C) ΔPT / °C −4.4 mW / °C Isolation Voltage (AC, 60 s., R.H. ≤ 60 %) (Note 1) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage VAC ― ― 120 Vac Forward Current IF* 15 20 25 mA Peak On-Stage Current ITP ― ― 1 A Operating Temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. * : In the case of TLP3042
TLP3041(S),TLP3042(S),TLP3043(S) 3 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation Individual Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT LED Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 10 ― pF DETECTOR Peak Off-State Current IDRM VDRM = 400 V ― 10 100 nA Peak On-Stage Voltage VTM ITM = 100 mA ― 1.7 3.0 V Holding Current IH ― ― 0.6 ― mA Critical Rate of Rise of Off- State Voltage dv / dt Vin = 120 Vrms, Ta = 85 °C (Fig.1) 200 500 ― V / μs Critical Rate of Rise of Commutating Voltage dv / dt(c) Vin = 30 Vrms, IT = 15 mA (Fig.1) ― 0.2 ― V / μs Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Trigger LED Current TLP3041(S) IFT VT = 3 V ― ― 15 mA TLP3042(S) ― 5 10 TLP3043(S) ― ― 5 Inhibit Voltage VIH IF = Rated IFT ― ― 40 V Leakage in Inhibited State IIH IF = Rated IFT VT = Rated VDRM ― 100 300 μA Capacitance Input to Output CS VS = 0 V, f = 1 MHz ― 0.8 ― pF Isolation Resistance RS VS = 500V, R.H. ≤ 60 %) 5×1010 1014 ― Ω Isolation Voltage BVS AC, 60 s 5000 ― ― Vrms Fig. 1 dv / dt test circuit ＋5V,VCC dv / dt Vin dv / dt Rin RL 2kΩ VCC 120Ω
TLP3041(S),TLP3042(S),TLP3043(S) 4 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
TLP3041(S),TLP3042(S),TLP3043(S) 5 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
TLP3041(S),TLP3042(S),TLP3043(S) 6 2019 -06-17 © 2019 Toshiba Electronic Devices & Storage Corporation RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.
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