120N80B

SFP120N80B SCILICON | Alldatasheet

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SFP(B)120N80B 5NsMOSFET580V,5120A,55.5mΩ5 Features Product Summary /circle6 Adanced5trench5process5technology /circle6 Fully5characterized5Avalance5voltage5and5current5 5 /circle6 Good5stablity5and5uniformity5with5hige5EAS /circle6 Fast5Switching Application /circle6 Power5switching5application /circle6 UPS5(Uninterruptible5Power5Supplies)5 /circle6 DC/DC5converter5 /circle6 General5purpose5applications Maximum Ratings Parameter Symbol Value Unit Drainssource5voltage5 V DS 5 805 V5 Continuous5drain5current5 T C 5=525°C5(Silicon5limit)5 T C 5=5100°C5(Silicon5limit)5 I D 120 Pulsed5drain5current5 T C 5=525°C,5t p 5limited5by5T jmax I D5pulse 5 4505 Avalanche5energy,5single5pulse5(L=1mH,Rg=25Ω, ID=sweep(14A~46A))5 E AS 12005 mJ5 Gatesemitter5voltage5 V GS 5 ±205 V5 Power5dissipation5 T C 5=525°C5 P tot 5 2205 W5 Operating5junction5and5storage5temperature5 T j 5,5T stg 5 s55...+1505 ℃5 VDS5 80V5 R DS(on)@VGS=10V mΩ5 I D 5 5 120A5 Part ID Package Type SFP120N80B TO-263 TO-220 Marking SFB120N80B 120N80B 120N80B 5.5 High5Ruggedness /circle6 Page 1

SFP(B)120N80B Thermal Resistance Parameter Symbol Value Unit Thermal5resistance,5junction5–5case.5Max5 R thJC 5 0.665 Thermal5resistance,5junction5–5ambient.5Max5 R thJA 5 62.05 ℃/W5 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Test Condition min. typ. max.5 Unit Static Characteristic Drainssource5breakdown5 voltage5 V (BR)DSS V GS =0V,5I D =250uA5 805 885 s5 Gate5threshold5voltage5 V GS(th5) V DS GS D =250uA5 T j =25°C5 T j =125°C5 2.05 2.85 4.05 Zero5gate5voltage5drain5current5 I DSS V DS =80V,V GS =0V5 T j =25°C5 T j =125°C5 0.055 µA5 Gatessource5leakage5current5 I GSS 5 V GS =20V,V DS =0V5 s5 15 100 nA5 Drainssource5onsstate5 resistance5 R DS(on) V GS =10V,5I D =40A,5 T j =25°C5 T j =125°C5 5.55 6.55 mΩ5 Dynamic Characteristic Input5Capacitance5 C iss 5 s5 5300 Output5Capacitance5 C oss 5 s5 860 Reverse5Transfer5Capacitance5 C rss V GS =0V,5V DS =25V,5 f=1MHz5 s5 420 pF5 Gate5Total5Charge5 Q G 5 s5 1255 s5 GatesSource5charge5 Q gs 5 s5 20.05 s5 GatesDrain5charge5 Q gd V GS =10V,5V DS =30V,5 I D =30A,5f=1MHz5 s5 45.05 s5 nC Turnson5delay5time5 t d(on) 5 s5 35.25 s5 Rise5time5 t r 5 s5 38.95 s5 Turnsoff5delay5time5 t d(off) 5 s5 45.15 s5 Fall5time5 t f T j =25°C,5V GS =10V,5 V DS =30V,5R L =15Ω5 s5 22.85 s5 ns5 Body Diode Characteristic Body5Diode5Forward5Voltage5 V SD 5 V GS =0V,I SD =40A s5 0.755 1.2 Body5Diode5Reverse5Recovery5 Time5 t rr 5 I F =40A,5 dI/dt=100A/µs5 5 605 5 ns5 Body5Diode5Reverse5Recovery5 Charge5 Q rr 5 I F =40A,5 dI/dt=100A/µs5 nC5 Page 2 5 76

SFP(B)120N80B Typical Performance Characteristics Page 3 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 91036_01 Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) V DS, Drain-to-Source Voltage (V) I D , Drain Current (A) Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91036_02 4.5 V I D = 18 A V GS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 T J Junction Temperature ( R DS(on) , Drain-to-Source On Resistance (Normalized) 91036_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 3000 2500 2000 1500 500 1000 Capacitance (pF) V DS Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = C gs + C gd , C ds Shorted C rss = C gd C oss = C ds + C gd 91036_05 Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 20 µs Pulse Width V DS = 50 V I D , Drain Current (A) V GS, Gate-to-Source Voltage (V) 5 6 789 1 04 C 150 C 91036_03 Q G , Total Gate Charge (nC) V GS , Gate-to-Source Voltage (V) V DS = 40 V V DS = 100 V For test circuit see figure 13 V DS = 160 V 91036_06 I D = 18 A

SFP(B)120N80B Page 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature V SD , Source-to-Drain Voltage (V) I SD , Reverse Drain Current (A) C 150 C V GS = 0 V 91036_07 1.50 I D , Drain Current (A) T C , Case Temperature (°C) 25 150 125 100 91036_09 Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms µs 100 µs ms ms Operation in this area limited by R DS(on) V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) T C = 25 C T J = 150 C Single Pulse 0.1 0.1 91036_08 Pulse width 1 µs Duty factor 0.1 % R D V GS R G D.U.T. 10 V V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 0.1 0.1 1 10 P DM t t t , Rectangular Pulse Duration (s) Thermal Response (Z thJC Notes: 1. Duty Factor, D = t 2. Peak T j = P DM x Z thJC + T C Single Pulse (Thermal Response) 0.5 0.2 0.1 0.05 0.02 0.01 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

SFP(B)120N80B Page 5 Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform R G I AS 0.01 Ω t p D.U.T L V DS V DD 10 V Vary t p to obtain required I AS Q GS Q GD Q G V G Charge 10 V Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13b - Gate Charge Test Circuit I AS V DS V DD V DS t p 1400 400 600 800 1000 1200 25 150 125 100 Starting T J , Junction Temperature (°C) E AS , Single Pulse Energy (mJ) Bottom Top I D 6.0 A 11.0 A 18.0 A V DD = 50 V 91036_12c 200 D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T.

SFP(B)120N80B PACKAGE DIMENSION TO-220 TO-263 Page 6