120LQ045 IRF | Alldatasheet
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120 Amp, 45V
Major Ratings and Characteristics Description/Features 03/29/01 CASE STYLE IR Case Style SMD-1 www.irf.com 1 Characteristics 120LQ045 Units IF(AV) 120 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 800 A VF @ 120Apk, TJ =125°C 1.07 V TJ,TstgOperating and storage-55 to 150 °C CATHODE ANODE ANODE HIGH EFFICIENCY SERIES The 120LQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability Surface Mount Lightweight PD - 91858
2 www.irf.com Part number 120LQ045 VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Voltage Ratings Parameters Limits Units Conditions IF(AV) Max. Average Forward Current 120 A 50% duty cycle @ T C = 64°C, square waveform See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive 800 A @ tp = 8.3 ms half-sine Surge Current Absolute Maximum Ratings Parameters Limits Units Conditions VFM Max. Forward Voltage Drop 0.73 V @ 30A See Fig. 1/G81 0.91 V @ 60A T J = -55°C /G82
1.25 V @ 120A
0.57 V @ 30A
0.71 V @ 60A T J = 25°C /G20/G82
0.99 V @ 120A
0.51 V @ 30A
0.70 V @ 60A T J = 125°C /G82
1.07 V @ 120A
IRM Max. Reverse Leakage Current 8.0 mA T J = 25°C See Fig. 2/G81 14 mA T J = 100°CV R = rated VR /G82 75 mA T J = 125°C CT Max. Junction Capacitance 4500 pF V R = 5VDC ( 1MHz, 25°C ) /G82 L S Typical Series Inductance 5.9 nH Measured from center of cathode pad to center of anode pad Electrical Specifications Parameters Limits Units Conditions TJ Max.Junction Temperature Range -55 to 150 °C Tstg Max. Storage Temperature Range -55 to 150 °C R thJC Max. Thermal Resistance, Junction 0.8 °C/W DC operation See Fig. 4 to Case wt Weight (Typical) 2.6 g Die Size (Typical) 275X275 mils Case Style SMD-1 Thermal-Mechanical Specifications /G81 Pulse Width < 300µs, Duty Cycle < 2% /G82 Pins 2 and 3 externally tied together
www.irf.com 3 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics Forward Voltage Drop - VF (V) 100 1000 Instantaneous Forward Current - I F (A) Tj = -55°C Tj = 125°C Tj = 25°C 0 10 20 30 40 50 Reverse Voltage - VR (V) 0.001 0.01 0.1 100 Reverse Current - I R ( mA ) 125°C 75°C 25°C 100°C 0 10 20 30 40 50 Reverse Voltage -VR (V) 1000 10000 Junction Capacitance - C T (pF) TJ = 25°C
4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 0 20 40 60 80 100 120 140 Average Forward Current - IF(AV) (A) 100 120 140 160 180 Allowable Case Temprature - ( °C) 120LQ045 R thJC = 0.8°C/W DC 0.01 0.1 /G20 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01