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UNISONIC TECHNOLOGIES CO., LTD 11NM40 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A38.b 11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM40 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A * High switching speed * Low effective output capacitance (Typ.=95pF) * Low gate charge (Typ.=40nC) SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 11NM40L-TF3-T 11NM40G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
11NM40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-A38.b ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V TC=25°C 11.6 A Continuous TC=100°C ID 7 A Drain Current Pulsed (Note 1) I DM 33 A Avalanche Current (Note 1) I AR 11 A Single Pulsed Avalanche Energy (Note 2) E AS 154 mJ Repetitive Avalanche Energy (Note 1) E AR 12.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TC=25°C 125 W Total Power Dissipation Derate above 25°C PD 1.0 W/°C Operating Temperature Range T J -55~+150 °C Storage Temperature Range T STG -55~+150 °C Maximum Lead Temperature for Soldering Purposes, 1/8" from Case for 5 Seconds TL 300 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 2.3mH, IAS = 11.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 11.6A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.0 °C/W
11NM40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-A38.b ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA, TJ=25°C 400 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C 0.6 V/°C Drain-Source Avalanche Breakdown Voltage BVDS V GS=0V, ID=11A 700 V VDS=400V, VGS=0V 1 µAZero Gate Voltage Drain Current I DSS VDS=320V, TC=125°C 10 µA Forward V GS=+30V, VDS=0V +100 nAGate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V DS=10V, ID=5.7A 0.32 0.38 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 1148 1490 pF Output Capacitance C OSS 671 870 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 63 82 pF Output Capacitance C OSS V GS=0V, VDS=320V, f=1.0MHz 35 pF Effective Output Capacitance C OSS eff V DS=0V~320V, VGS=0V 95 pF SWITCHING PARAMETERS Total Gate Charge Q G 40 52 nC Gate to Source Charge Q GS 7.2 nC Gate to Drain Charge Q GD VGS=10V, VDS=320V, ID=11A (Note 4, 5) 21 nC Turn-ON Delay Time t D(ON) 55 80 ns Rise Time t R 115 205 ns Turn-OFF Delay Time t D(OFF) 330 400 ns Fall-Time t F VDD=200V, ID=11A, RG=25Ω (Note 4, 5) 140 180 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 11.6 A Maximum Pulsed Drain-Source Diode Forward Current ISM 33 A Drain-Source Diode Forward Voltage V SD I S=11.6A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 390 ns Body Diode Reverse Recovery Charge Q RR IS=11.6A, VGS=0V, dIF/dt=100A/µs (Note 4) 5.7 µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C. 3. ISD≤11A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C. 4. Pulse Test : Pulse width≤300µs, Duty cycle≤2%. 5. Essentially independent of operating temperature.
11NM40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-A38.b TEST CIRCUITS AND WAVEFORMS VGS DUT RG VDS RD Resistive Switching Test Circuit Resistive Switching Waveforms VDS VGS 90% 10% td(ON) tR tFtd(OFF) 10V tON tOFF
11NM40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-A38.b TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms
11NM40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-A38.b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.