11N90G-T3N-T

UNISONIC TECHNOLOGIES CO., LTD

Document overview

• PDF pages: 7

Technical content

UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-497.E

11 Amps, 900 Volts

 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply,  FEATURES * RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested  SYMBOL  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 11N90L-TA3-T 11N90G-TA3-T TO-220 G D S Tube 11N90L-TF1-T 11N90G-TF1-T TO-220F1 G D S Tube 11N90L-TF2-T 11N90G-TF2-T TO-220F2 G D S Tube 11N90L-T3P-T 11N90G-T3P-T TO-3P G D S Tube 11N90L-T3N-T 11N90G-T3N-T TO-3PN G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 11N90L-TA3-T (1) Packing Type (2) Package Type (3) Green Package (1) T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 T3P: TO-3P, T3N: TO-3PN (3) L: Lead Free, G: Halogen Free and Lead Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  MARKING

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 900 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous I D 11 A Pulsed (Note 1) I DM 44 A Avalanche Energy Single Pulsed (Note 2) E AS 1000 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Power Dissipation TO-220 PD 160 W TO-220F1/TO-220F2 50 W TO-3P/TO-3PN 215 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F1 TO-220F2 θJA 62.5 °C/W TO-3P/TO-3PN 40 °C/W Junction to Case TO-220 θJC 0.78 °C/W TO-220F1/TO-220F2 2.48 °C/W TO-3P/TO-3PN 0.58 °C/W

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 900 V Breakdown Voltage Temperature Coefficient △BVDSS △/T J ID=250µA, Referenced to 25°C 1.0 V/°C Drain-Source Leakage Current I DSS VDS=900V, VGS=0V 10 µAVDS=720V, TC=125°C 100 Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V 100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.5A 0.91 1.1 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 980 1380 pF Output Capacitance C OSS 170 280 pF Reverse Transfer Capacitance C RSS 18 25 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=50V, ID=1.3A (Note 4, 5) 60 80 nC Gate to Source Charge Q GS 14 nC Gate to Drain Charge Q GD 22 nC Turn-ON Delay Time t D(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 4, 5) 125 140 ns Rise Time t R 260 320 ns Turn-OFF Delay Time t D(OFF) 340 380 ns Fall-Time t F 220 270 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current (Note1) ISM 44 A Drain-Source Diode Forward Voltage (Note 4) VSD I S=11A, VGS=0V 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 15mH, IAS = 11A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 4 9 7 . E  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 34 625 100 150 200 250 300 0 300 600 900 1200 0 100 150 200 250 300 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 01 2 3 4 VGS=10V, ID=5.5A 6 0 Body-Diode Continuous Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Body-Diode Continuous Current, IS (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.