11N90C

FQA11N90C_07 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 11A, 900V, R DS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
• F a s t s w i t c h i n g
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G SGSD TO-3PN FQA Series Symbol Parameter FQA11N90C_F109 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (T C = 25°C) 11.0 A - Continuous (TC = 100°C) 6.9 A IDM Drain Current - Pulsed (Note 1) 44.0 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 960 mJ IAR Avalanche Current (Note 1) 11.0 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 300 W - Derate above 25°C 2.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.42 °C /W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C /W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C /W

2 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, IAS =11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQA11N90C FQA11N90C_F109 TO-3PN -- -- 30 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 µA 900 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 1.02 -- V/°C IDSS Zero Gate Voltage Drain Current V DS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA3 . 0 - - 5 . 0 V RDS(on) Static Drain-Source On-Resistance V GS = 10 V, ID = 5.5 A -- 0.91 1.1 Ω gFS Forward Transconductance V DS = 50 V, ID = 5.5 A (Note 4) -- 9.0 -- S Dynamic Characteristics Ciss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2530 3290 pF Coss Output Capacitance -- 215 280 pF Crss Reverse Transfer Capacitance -- 23 30 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 450 V, ID = 11.0A, RG = 25 Ω (Note 4, 5) -- 60 130 ns tr Turn-On Rise Time -- 130 270 ns td(off) Turn-Off Delay Time -- 130 270 ns tf Turn-Off Fall Time -- 85 180 ns Qg Total Gate Charge V DS = 720 V, ID = 11.0A, VGS = 10 V (Note 4, 5) -- 60 80 nC Qgs Gate-Source Charge -- 13 -- nC Qgd Gate-Drain Charge -- 25 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS =11.0 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 11.0 A, dIF / dt = 100 A/µs (Note 4) -- 1000 -- ns Qrr Reverse Recovery Charge -- 17.0 -- µC

5 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

6 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms

7 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters

8 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CH ANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL CO MPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT FAST® FastvCore™ FPS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC UniFET™ VCX™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub- lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontin- ued by Fairchild Semiconductor. The datasheet is printed for reference infor- mation only. Rev. I31