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UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-497.a

11 Amps, 900 Volts

„ DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply, „ FEATURES * 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V * High switching speed * Improved dv/dt capability * 100% avalanche tested * Halogen Free „ SYMBOL TO-220 TO-220F1 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 11N90L-TA3-T 11N90G-TA3-T TO-220 G D S Tube 11N90L-TF1-T 11N90G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

11N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-497.a „ ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 900 V Gate-Source Voltage V GSS ±30 V Continuous I D 11 A Drain Current Pulsed (Note 1) I DM 28.0 A Single Pulsed (Note 2) E AS 960 mJ Avalanche Energy Repetitive (Note 1) E AR 12 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220 160 W Power Dissipation TO-220F1 PD 50 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 °C/W Junction to Ambient TO-220F1 θJA 62.5 °C/W TO-220 0.78 °C/W Junction to Case TO-220F1 θJC 2.48 °C/W

11N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-497.a „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 900 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J ID=250µA, Referenced to 25°C 1.0 V/°C VDS=900V, VGS=0V 10Drain-Source Leakage Current I DSS VDS=720V, TC=125°C 100 µA Forward V GS=+30V, VDS=0V 100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.5A 0.91 1.1 Ω Forward Transconductance g FS V DS=50V, ID=5.5A (Note 4) S DYNAMIC PARAMETERS Input Capacitance C ISS 2530 3290 pF Output Capacitance C OSS 215 280 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 23 30 pF SWITCHING PARAMETERS Total Gate Charge Q G 60 80 nC Gate to Source Charge Q GS 13 nC Gate to Drain Charge Q GD VGS=10V, VDS=720V, ID=11.0A (Note 4, 5) 25 nC Turn-ON Delay Time t D(ON) 60 130 ns Rise Time t R 130 270 ns Turn-OFF Delay Time t D(OFF) 130 270 ns Fall-Time t F VDD=450V, ID=11.0A, RG=25Ω (Note 4, 5) 85 180 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current (Note1) ISM 28.0 A Drain-Source Diode Forward Voltage (Note 4) VSD I S=11A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 1000 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=11.0A, dIF/dt=100A/µs (Note 4) 17.0 µC Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 37mH, I AS = 7.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. I SD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

11N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-497.a „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

11N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-497.a VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

11N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-497.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.