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UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A99.c 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC adv anced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N60K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 11N60KL-TF2-T 11N60KG-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
11N60K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-A99.c ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 600 V Gate to Source Voltage V GSS ±30 V TC=25°C 11 (Note 2) A Continuous Drain Current TC=100°C ID 7 (Note 2) A Pulsed Drain Current (Note 3) I DM 44 (Note 2) A Single Pulsed Avalanche Energy(Note 4) E AS 440 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns Power Dissipation 48 W Derate above 25°C PD 0.38 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating : Pulse width limited by maximum junction temperature 4. L=7.27mH, I AS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.58 °C/W
11N60K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-A99.c ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 600 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C 0.5 V/°C VDS=600V, VGS=0V 10 µADrain-Source Leakage Current I DSS VDS=600V, TJ=125°C 100 µA Gate-Source Leakage Current I GSS V DS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS= VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.5A 0.61 1.00 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 850 1200 pF Output Capacitance C OSS 139 150 pF Reverse Transfer Capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 10 20 pF SWITCHING PARAMETERS Total Gate Charge Q G 35 55 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD VDS=30V, VGS=10V, ID=0.5A (Note 1, 2) 9 nC Turn-ON Delay Time t D(ON) 74 90 ns Turn-ON Rise Time t R 95 120 ns Turn-OFF Delay Time t D(OFF) 180 200 ns Turn-OFF Fall Time t F VDD=50V, ID=1.3A, RG=3Ω (Note 1, 2) 96 120 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current I SM 44 A Drain-Source Diode Forward Voltage V SD I S =11A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr 90 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=11A, dIF/dt=100A/μs (Note 1) 1.5 μC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature
11N60K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-A99.c TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
11N60K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-A99.c TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
11N60K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-A99.c UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.