11N50L-TF3-T

11N50_15 UTC | Alldatasheet

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• Manufacturer or author: q-nicole
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UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-462.d 11A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced pla nar stripe, DMOS technology to provide customers perfect switch ing performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. „ FEATURES * RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * With 100% Avalanche Tested „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F TO-220F1 TO-2621 „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 11N50L-TA3-T 11N50G-TA3-T TO-220 G D S Tube 11N50L-TF1-T 11N50G-TF1-T TO-220F1 G D S Tube 11N50L-TF3-T 11N50G-TF3-T TO-220F G D S Tube 11N50L-T2Q-T 11N50G-T2Q-T TO-262 G D S Tube

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-462.d „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±30 V Continuous Drain Current TC=25°C ID 11 (Note 2) A TC=100°C 7 (Note 2) A Pulsed Drain Current (Note 3) I DM 44 (Note 2) A Single Pulsed Avalanche Energy(Note 4) E AS 670 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns Power Dissipation TC=25°C TO-220 PD 195 W TO-220F1 40 TO-220F 48 TO-262 195 Derate above 25°C TO-220 1.56 W/°C TO-220F1 0.32 TO-220F 0.39 TO-262 1.56 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating : Pulse width limit ed by maximum junction temperature 4. L=10mH, I AS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. I SD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.64 °C/W TO-220F1 3.1 TO-220F 2.58 TO-262 0.64

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-462.d „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 500 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 0.5 V/°C Drain-Source Leakage Current I DSS VDS=500V, VGS=0V 10 µA VDS=500V, TJ=125°C 100 µA Gate-Source Leakage Current I GSS V DS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS= VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.5A 0.48 0.55 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V,VGS=0V,f=1.0MHz 1515 2055 pF Output Capacitance C OSS 185 235 pF Reverse Transfer Capacitance C RSS 25 30 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=400V, VGS=10V, ID=11A (Note 1, 2) 43 55 nC Gate-Source Charge Q GS 8 nC Gate-Drain Charge Q GD 19 nC Turn-ON Delay Time t D(ON) VDD=250V, ID=11A, RG=3Ω (Note 1, 2) 24 57 ns Turn-ON Rise Time t R 70 150 ns Turn-OFF Delay Time t D(OFF) 120 250 ns Turn-OFF Fall Time t F 75 160 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current I SM 44 A Drain-Source Diode Forward Voltage V SD I S =11A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr VGS=0V, IS=11A, dIF/dt=100A/μs (Note 1) 90 ns Body Diode Reverse Recovery Charge Q RR 1.5 μC Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-462.d „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-462.d „ TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-462.d UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.