11N50

11N50 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-462.a 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. „ FEATURES * Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low C RSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.) „ SYMBOL D G S TO-220F1 „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 11N50L- TF1-T 11N50G-TF1-T TO-220F1 G D S Tube

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-462.a „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±30 V TC=25°C I D 11 (Note 1) A Continuous Drain Current TC=100°C I D 7 (Note 1) A Pulsed Drain Current (Note 2) I DM 44 (Note 1) A Single Pulsed Avalanche Energy(Note 3) E AS 670 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC=25°C 48 W Total Power Dissipation Derate above 25°C PD 0.39 W/°C Operating Junction Temperature T J -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Drain current limited by maximum junction temperature 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4.ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.58 °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 500 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 0.5 V/°C VDS=500V, VGS=0V 10 µADrain-Source Leakage Current I DSS VDS=500V, TJ=125°C 100 µA Gate-Source Leakage Current I GSS V DS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS= VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.5A 0.48 0.55 Ω Forward Transconductance g FS V DS=40V, ID=5.5A (Note 1) 15 S DYNAMIC PARAMETERS Input Capacitance C ISS 1515 2055 pF Output Capacitance C OSS 185 235 pF Reverse Transfer Capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 25 30 pF SWITCHING PARAMETERS Total Gate Charge Q G 43 55 nC Gate-Source Charge Q GS 8 nC Gate-Drain Charge Q GD VDS=400V, VGS=10V, ID=11A (Note 1, 2) 19 nC Turn-ON Delay Time t D(ON) 24 57 ns Turn-ON Rise Time t R 70 150 ns Turn-OFF Delay Time t D(OFF) 120 250 ns Turn-OFF Fall Time t F VDD=250V, I D=11A, R G=3Ω (Note 1, 2) 75 160 ns Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-462.a „ ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current I SM 44 A Drain-Source Diode Forward Voltage V SD I S =11A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 90 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=11A, dIF/dt=100A/μs4 1.5 μC

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-462.a „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-462.a „ TEST CIRCUITS AND WAVEFORMS (Cont.) 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

11N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-462.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.