11N40C

FQP11N40C FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 10.5 A, 400 V, R DS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-220 GDS TO-220F GDS G S D

FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Device Marking Device Package Reel Size Tape Width Quantity FQP11N40C FQP11N40C TO-220 Tube N/A 50 units FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 400 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coeffi- cient ID = 250 μA, Referenced to 25°C -- 0.54 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 μA VDS = 320 V, TC = 125°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2 . 0 - - 4 . 0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A -- 0.43 0.53 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.25 A -- 7.1 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 840 1090 pF Coss Output Capacitance -- 250 325 pF Crss Reverse Transfer Capacitance -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 200 V, ID = 10.5 A, RG = 25 Ω (Note 4) -- 14 40 ns tr Turn-On Rise Time -- 89 190 ns td(off) Turn-Off Delay Time -- 81 170 ns tf Turn-Off Fall Time -- 81 170 ns Qg Total Gate Charge VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4) -- 28 35 nC Qgs Gate-Source Charge -- 4 -- nC Qgd Gate-Drain Charge -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/μs -- 290 -- ns Qrr Reverse Recovery Charge -- 2.4 -- μC

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

• ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
• ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB ically the warranty therein, which covers Fairchild products.

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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