11N40

11N40 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-219.Aa

400 V N-CHANNEL MOSFET

„ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 0.48Ω @VGS = 10 V * Ultra low gate charge ( typical 27 nC ) * Low reverse transfer capacitance ( C RSS = typical 20 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain Lead-free: 11N40L Halogen-free: 11N40G „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Halogen Free Package 1 2 3 Packing 11N40-TF3-T 11N40L-TF3-T 11N40G-TF3-T TO-220F G D S Tube

11N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 9 . A a „ ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current (TC = 25℃) I D 11.4 A Pulsed Drain Current (Note 1) I DM 46 A Avalanche Current (Note 1) I AR 11.4 A Single Pulsed(Note 2) E AS 520 Avalanche Energy Repetitive(Note 1) E AR 14.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns

147 W Power Dissipation

Derate above 25℃ PD 1.18 W/ ℃ Junction Temperature T J 150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to- Ambient θJA 62.5 ℃/W Junction-to-Case θJC 0.85 ℃/W „ ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0 V, ID =250 µA 400 V VDS =400V, VGS =0 V 1 Zero Gate Voltage Drain Current I DSS VDS =320V, TC =125°C 10 µA Gate-Body Leakage Current I GSS V DS =0 V, VGS = ±30 V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ I D =250 µA, Referenced to25°C 0.42 mV/℃ ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =VGS, ID =250 µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS = 10 V, ID = 5.7 A 0.38 0.48 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 1100 1400 Output Capacitance C OSS 180 240 Reverse Transfer Capacitance C RSS VDS =25V, VGS =0V, f=1MHz 20 30 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 30 70 Turn-ON Rise Time t R 100 210 Turn-OFF Delay Time t D(OFF) 60 130 Turn-OFF Fall-Time t F VDD=200V, ID=11.4A, RGEN =25Ω(Note 4,5) 60 130 ns Total Gate Charge Q G 27 35 Gate Source Charge Q GS 7.3 Gate Drain Charge Q GD VDS =320V, VGS =10V, ID =11.4A (Note 4,5) 12.3 nC

11N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 9 . A a „ ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=11.4 A,VGS= 0 V 1 . 5 V Maximum Continuous Drain-Source Diode Forward Current IS 11.4 Maximum Pulsed Drain-Source Diode Forward Current ISM 46 A Reverse Recovery Time t RR 240 ns Reverse Recovery Charge Q RR VGS = 0 V, dIF /dt = 100 A/ s, IS = 11.4 A (Note 4) 1.8 µC Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C. 3. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Independent of operating temperature.

11N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 9 . A a „ TEST CIRCUIT Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

11N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 9 . A a „ TEST CIRCUIT(Cont.) Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit

11N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 9 . A a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.