11DQ05_12 VISHAY | Alldatasheet

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VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Revision: 21-Sep-11 1 Document Number: 93206 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Rectifier, 1.1 A

FEATURES

  • Low profile, axial leaded outline  High frequency operation  Very low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  Guard ring for enhanced ruggedness and long term reliability
  • Compliant to RoHS Directive 2002/95/EC
  • Designed and qualified for commercial level
  • Halogen-free according to IEC 61249-2-21 definition (-M3 only)

DESCRIPTION

The VS-11DQ... axial leaded Schottky rectifier has been optimized for very low forwar d voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY Package DO-204AL (DO-41) IF(AV) 1.1 A VR 50 V, 60 V VF at IF See Electrical table IRM max. 11.0 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 2.0 mJ Cathode Anode DO-204AL MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 1.1 A VRRM 50/60 V IFSM tp = 5 μs sine 150 A VF 1 Apk, TJ = 125 °C 0.53 V TJ Range - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-11DQ05 VS-11DQ05-M3 VS -11DQ06 VS-11DQ06-M3 UNITS Maximum DC reverse voltage VR 50 50 60 60 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 I F(AV) 50 % duty cycle at TC = 84 °C, rectangular waveform 1.1 AMaximum peak one cycle non-repetitive surge current See fig. 6 I FSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated V RRM applied 150 10 ms sine or 6 ms rect. pulse 25 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Revision: 21-Sep-11 2 Document Number: 93206 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % Note (1) thermal runaway condition for a diode on its own heatsink ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 V FM (1) 1 A TJ = 25 °C 0.58 V 2 A 0.76 1 A T J = 125 °C 0.53 2 A 0.64 Maximum reverse leakage current See fig. 2 I RM (1) TJ = 25 °C VR = Rated VR 1.0 mA TJ = 125 °C 11 Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 55 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J (1), TStg - 40 to 150 °C Maximum thermal resistance, junction to ambient R thJA DC operation Without cooling fin 100 °C/WTypical thermal resistance, junction to lead R thJL DC operation See fig. 4 81 Approximate weight 0.33 g 0.012 oz. Marking device Case style DO-204AL (DO-41) 11DQ05 11DQ06 dPtot dTJ RthJA

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Revision: 21-Sep-11 3 Document Number: 93206 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - - Typical Values of Reverse Current vs. Reverse Voltage Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Ambient Temperature vs. Average Forward Current, Printed Circuit Board Mounted Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR IF - Instantaneous Forward Current (A) 93206_01 VFM - Forward Voltage Drop (V) 0.1 T = 150 °C T = 125 °C T = 25 °C IR - Reverse Current (mA) VR - Reverse Voltage (V)93206_02 0.0001 0.001 0.01 0.1 100 0 10 20 30 40 50 60 70 TJ = 150° C TJ = 125° C TJ = 25° C CT - Junction Capacitance (pF) VR - Reverse Voltage (V)93206_03 T 100 0 10 20 30 40 50 60 70 TJ = 25 °C Allowable Case Temperature (°C) IF(AV) - Average Forward Current (A)93206_04 100 120 140 160 DC Square wave (D = 0.50) 80 % Rated VR applied see note (1) Average Forward Current - IF(AV) (A) Average Power Loss (W) 93206_05 0.2 0.4 0.6 0.8 DCRMS Limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 tp - Square Wave Pulse Duration (µs) IFSM - Non-Repetitive Surge Current (A) 93206_06 100 1000 10 100 1000 10 000 At Any Rated Load Condition And With rated VRRM Applied Following Surge TJ = 25 °C

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Revision: 21-Sep-11 4 Document Number: 93206 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORDERING INFORMATION TABLE ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-11DQ05 1000 1000 Bulk VS-11DQ05TR 5000 5000 Tape and reel VS-11DQ05-M3 1000 1000 Bulk VS-11DQ05TR-M3 5000 5000 Tape and reel VS-11DQ06 1000 1000 Bulk VS-11DQ06TR 5000 5000 Tape and reel VS-11DQ06-M3 1000 1000 Bulk VS-11DQ06TR-M3 5000 5000 Tape and reel - 11 = 1.1 A (axial and small packages - current is x 10)2 - D = DO-41 package3 - Q = Schottky Q.. series4 - 06 = Voltage ratings5 - TR = Tape and reel package None = Bulk package 05 = 50 V 06 = 60 V Device code 62 43 5

11 D Q 06 TRVS- -M3

  • Vishay Semiconductors product None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free - Environmental digit LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338

www.vishay.com Vishay Semiconductors Revision: 29-Aug-11 1 Document Number: 95241 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) 2.29 (0.090) DIA. 2.70 (0.106) 2.29 (0.090) DIA. 0.86 (0.034) 0.72 (0.028) (2 places) 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) DIA. 0.86 (0.034) 0.72 (0.028) (2 places) DIA. Cathode band

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