113MT160KS90PBF VISHAY | Alldatasheet

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Document Number: 94353 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 13-Aug-08 1 Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Vishay High Power Products

FEATURES

  • Package fully compatible with the industry standard INT-A-PAK power modules series
  • High thermal conductivity package, electrically insulated case
  • Excellent power volume ratio
  • 4000 V RMS isolating voltage
  • UL E78996 approved
  • Compliant to RoHS directive 2002/95/EC
  • Designed and qualified for industrial level

DESCRIPTION

A range of extremely compact, encapsulated three phase controlled bridge rectifiers of fering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. PRODUCT SUMMARY IO 55 A to 110 A MTK MAJOR RATINGS AND CHARACTERISTICS IO 55 90 110 A TC 85 85 85 °C IFSM

50 Hz 390 950 1130

A

60 Hz 410 1000 1180

50 Hz 770 4525 6380

60 Hz 700 4130 5830

I2√t 7700 45 250 63 800 A 2√s VRRM Range 800 to 1600 V TStg, TJ Range - 40 to 125 °C

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94353

2 Revision: 13-Aug-08

Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM/IDRM, MAXIMUM AT TJ = 125 °C mA 5.MT...K 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 9.MT...K 11.MT...K 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 FORWARD CONDUCTION Maximum DC output current at case temperature IO 120° rect. conduction angle 55 90 110 A 85 85 85 °C Maximum peak, one-cycle forward, non-repetitive on state surge current I TSM t = 10 ms No voltage reapplied Initial TJ = TJ maximum 390 950 1130 A t = 8.3 ms 410 1000 1180 t = 10 ms 100 % VRRM reapplied 330 800 950 t = 8.3 ms 345 840 1000 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 770 4525 6380 A2s t = 8.3 ms 700 4130 5830 t = 10 ms 100 % VRRM reapplied 540 3200 4510 t = 8.3 ms 500 2920 4120 Maximum I2√t for fusing I 2√t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A 2√s Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 1.17 1.09 1.04 VHigh level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ maximum 1.45 1.27 1.27 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 12.40 4.10 3.93 mΩHigh level value on-state slope resistance rt2 (I > π x IT(AV)), TJ maximum 11.04 3.59 3.37 Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 2.68 1.65 1.57 V Maximum non-repetitve rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current I H TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 mA Maximum latching current I L TJ = 25 °C, anode supply = 6 V, resistive load 400

Document Number: 94353 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 13-Aug-08 3 Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Vishay High Power Products Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90 BLOCKING RMS isolation voltage V ISOL TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 500 V/μs TRIGGERING Maximum peak gate power P GM TJ = TJ maximum W Maximum average gate power P G(AV) 2.5 Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - VGT 10 VMaximum required DC gate voltage to trigger VGT TJ = - 40 °C Anode supply = 6 V, resistive load 4.0 TJ = 25 °C 2.5 TJ = 125 °C 1.7 Maximum required DC gate current to trigger IGT TJ = - 40 °C 270 mATJ = 25 °C 150 TJ = 125 °C 80 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD 6m A THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating and storage temperature range TJ, TStg - 40 to 125 °C Maximum thermal resistance, junction to case RthJC DC operation per module 0.18 0.14 0.12 K/W DC operation per junction 1.07 0.86 0.70 120 °C rect. conduction angle per module 0.19 0.15 0.12 120 °C rect. conduction angle per junction 1.17 0.91 0.74 Maximum thermal resistance, case to heatsink per module R thCS Mounting surface smooth, flat and grased 0.03 Mounting torque ± 10 % to heatsink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm to terminal 3 to 4 Approximate weight 225 g

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94353

4 Revision: 13-Aug-08

Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Note

  • Table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Fig. 3 - Total Power Loss Characteristics ΔR CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° Maximum Allowable Case Temperature (°C) Total Output Current (A) 10 20 30 40 50 600 120° (Rect.) 5.MT..K Series 100 120 130 94353_01 110 Instantaneous On-State Current (A) Instantaneous On-State Voltage (V) 21 3456 70 94353_02 TJ = 25 °C 5.MT..K Series Per junction TJ = 125 °C 100 1000 Maximum Total Power Loss (W) Total Output Current (A) 51 510 25 35 3020 40 50 45 550 94353_03a 180 220 140 100 120 200 160 120° (Rect.) 5.MT..K Series TJ = 125 °C Maximum Total Power Loss (W) Maximum Allowable Ambient Temperature (°C) 25 50 75 100 1250 R thSA = 0 .05 K/W - ΔR

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1.0 K/W

1.5 K/W80

94353_03b

Document Number: 94353 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 13-Aug-08 5 Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Vishay High Power Products Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Total Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 10 1001 94353_04 5.MT..K Series Per junction At any rated load condition and with rated V RRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 150 250 200 300 Peak Half Sine Wave On-State Current (A) Pulse Train Duration (s) 0.1 10.01 Initial TJ = 125 °C No voltage reapplied Rated V RRM reapplied 5.MT..K Series Per junction 400 350 150 94353_05 250 200 300 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Maximum Allowable Case Temperature (°C) Total Output Current (A) 20 40 60 80 1000 120° (Rect.) 9.MT..K Series 100 120 130 94353_06 110 Instantaneous On-State Current (A) Total Output Current TJ = 25 °C TJ = 125 °C 94353_07 100 1000 9.MT..K Series Per junction Maximum Total Power Loss (W) Total Output Current (A) 10 20 30 40 50 70 60 90800 94353_08a 200 150 300 250 100 120° (Rect.) 9.MT..K Series TJ = 125 °C Maximum Total Power Loss (W) Maximum Allowable Ambient Temperature (°C) 25 50 75 100 1250 R thSA = 0.05 K/W - ΔR 0.12 K/W0.2 K/W

1.5 K/W

94353_08b

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94353

6 Revision: 13-Aug-08

Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Current Ratings Characteristic Fig. 12 - Forward Voltage Drop Characteristics Fig. 13 - Total Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 10 1001 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 94353_09 9.MT..K Series Per junction 850 400 650 450 750 700 550 500 600 800 Peak Half Sine Wave On-State Current (A) Pulse Train Duration (s) 0.1 10.01 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 9.MT..K Series Per junction 1000 800 300 94353_10 500 400 600 900 700 Initial TJ = 125 °C No voltage reapplied Rated V RRM reapplied Maximum Allowable Case Temperature (°C) Total Output Current (A) 20 40 60 80 100 1200 120° (Rect.) 11.MT..K Series 100 120 130 94353_11 110 Instantaneous On-State Current (A) Instantaneous On-State Voltage (V) 94353_12 100 1000 TJ = 25 °C TJ = 125 °C 11.MT..K Series Per junction Maximum Total Power Loss (W) Total Output Current 2010 40 30 60 50 80 70 100 90 1100 94353_13a 200 150 350 250 300 100 120° (Rect.) 11.MT..K Series TJ = 125 °C Maximum Allowable Ambient Temperature (°C) Maximum Total Power Loss (W) 25 50 75 100 1250 R thSA = 0.058 K/W - ΔR 94353_13b

Document Number: 94353 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 13-Aug-08 7 Three Phase Controlled Bridge (Power Modules), 55 A to 110 A Vishay High Power Products Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 16 - Thermal Impedance ZthJC Characteristics Fig. 17 - Gate Characteristics Peak Half Sine Wave On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 10 1001 At any rated load condition and with rated VRRM applied following surge. 94353_14 11.MT..K Series Per junction 1000 400 700 500 800 600 900 Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave On-State Current (A) Pulse Train Duration (s) 0.01 0.1 1.0 Initial TJ = 125 °C No voltage reapplied Rated V RRM reapplied Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 11.MT..K Series Per junction 1200 1000 400 94353_15 600 500 800 1100 700 900 0.001 0.01 0.1 0.001 94353_16 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (K/W) Per junction 5.MT..K Series 11.MT..K Series 9.MT..K Series Steady state value RthJC = 1.07 K/W RthJC = 0.86 K/W RthJC = 0.70 K/W (DC operation) 0.01 94353_17 0.1 0.001 0.01 0.1 1 Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) 1000 100 10 (b) (a) (4) (3) (2) (1) TJ = -40 °C TJ = 25 °C TJ = 125 °C VGD IGD Frequency Limited by PG(AV) Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω; t r = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω t r = 1 μs, tp ≥ 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94353

8 Revision: 13-Aug-08

Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ORDERING INFORMATION TABLE Note

  • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION Device code 513 2 11 3 MT 160 K S90 PbF - Current rating code: 5 = 55 A (average) 9 = 90 A (average) 11 = 110 A (average) - Circuit configuration code: 1 = Negative half-controlled bridge 2 = Positive half-controlled bridge 3 = Full-controlled bridge - Essential part number - Voltage code x 10 = V RRM (see Voltage Ratings table) - PbF = Lead (Pb)-free - Critical dV/dt: None = 500 V/µs (standard value) S90 = 1000 V/µs (special selection) Full-controlled bridge A D B EF C 64 3 Positive half-controlled bridge AB C D EF 12 5 Negative half-controlled bridge 64 3 A DE F BC LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.