51MT160KB IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio 4000 V RMS isolating voltage UL E78996 approved
Description
A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications.
www.irf.com 53-93-113MT ..KB Series Bulletin I27503 08/97 53MT.KB 93MT.KB 113MT.KB Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB IO Maximum DC output current 55 90 110 A 120° Rect conduction angle @ Case temperature 85 85 85 °C ITSM Maximum peak, one-cycle 390 950 1130 A t = 10ms No voltage forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied on state surge current 330 800 950 t = 10ms 100% V RRM 345 840 1000 t = 8.3ms reapplied Initial I2t Maximum I 2t for fusing 770 4525 6380 A 2s t = 10ms No voltage T J = TJ max. 700 4130 5830 t = 8.3ms reapplied 540 3200 4510 t = 10ms 100% V RRM 500 2920 4120 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 7700 45250 63800 A 2√s t = 0.1 to 10ms, no voltage reapplied voltage VT(TO)2 High level value of threshold1.45 1.27 1.27 (I > π x IT(AV)), @ TJ max. voltage slope resistance rt2 High level value on-state 11.04 3.59 3.37 (I > π x IT(AV)), @ TJ max. slope resistance VTM Maximum on-state voltage drop2.68 1.65 1.57 V I pk = 150A, TJ = 25°C tp = 400µs single junction di/dt Max. non-repetitive rate 150 A/µs T J = 25oC, from 0.67 VDRM , ITM = π x IT(AV), of rise of turned on current I g = 500mA, tr < 0.5 µs, tp > 6 µs IH Max. holding current 200 T J = 25oC, anode supply = 6V, mA resistive load, gate open circuit IL Max. latching current 400 T J = 25oC, anode supply = 6V, resistive load Forward Conduction Voltage V RRM , maximum V RSM , maximum V DRM , max. repetitive IRRM /IDRM max. Type number Code repetitive peak non-repetitive peak peak off-state voltage@ T J = 125°C reverse voltage reverse voltage gate open circuit VV V m A 80 800 900 800 100 1000 1100 1000 53/52/51MT..KB 120 1200 1300 1200 10 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 93/92/91MT..KB 100 1000 1100 1000 113/112/111MT..KB 120 1200 1300 1200 20 140 1400 1500 1400 160 1600 1700 1600 ELECTRICAL SPECIFICATIONS Voltage Ratings
www.irf.com 53-93-113MT ..KB Series Bulletin I27503 08/97 53MT.KB 93MT.KB 113MT.KB Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB VINS RMS isolation voltage 4000 V T J = 25oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise 500 V/µs T J = TJ max., linear to 0.67 VDRM , of off-state voltage (*) gate open circuit Blocking (*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90. Triggering 53MT.KB 93MT.KB 113MT.KB Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB PGM Max. peak gate power 10 W T J = TJ max. PG(AV) Max. average gate power 2.5 IGM Max. peak gate current 2.5 A -VGT Max. peak negative 10 V gate voltage VGT Max. required DC gate 4.0 V T J = - 40°C voltage to trigger 2.5 T J = 25°C Anode supply = 6V, resistive load
1.7 T J = 125°C
IGT Max. required DC gate 270 T J = - 40°C current to trigger 150 mA T J = 25°C Anode supply = 6V, resistive load
80 T J = 125°C
VGD Max. gate voltage 0.25 V @ T J = TJ max., rated VDRM applied that will not trigger IGD Max. gate current 6 mA that will not trigger Thermal and Mechanical Specifications 53MT.KB 93MT.KB 113MT.KB Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB TJ Max. junction operating -40 to 125 °C temperature range Tstg Max. storage temperature -40 to 125 °C range RthJC Max. thermal resistance, 0.18 0.14 0.12 K/W DC operation per module junction to case 1.07 0.86 0.70 DC operation per junction 0.19 0.15 0.12 120° Rect condunction angle per module 1.17 0.91 0.74 120° Rect condunction angle per junction RthCS Max. thermal resistance, 0.03 K/W Per module case to heatsink Mounting surface smooth, flat an greased T Mounting to heatsink 4 to 6 Nm torque ± 10% to terminal 3 to 4 wt Approximate weight 225 g A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.
www.irf.com 53-93-113MT ..KB Series Bulletin I27503 08/97 1 23 1 - Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) 11 = 110 A (Avg) 2 - Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge 1 = Negative half-controlled bridge 3 - Essential part number 4 - Voltage code: Code x 10 = V RRM (See Voltage Ratings Table) 5 - Generation II 6 - Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection) Device Code Ordering Information Table 5 6 11 3 MT 160 K B S90 Sinusoidal conduction @ TJ max. Rectangular conduction @ T J max.Devices Units180o 120o 90o 60o 30o 180o 120o 90o 60o 30o ΔR Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) NOTE: To order the Optional Hardware see Bulletin I27900 negative half-controlled bridge positive half-controlled bridge full-controlled bridge
www.irf.com 53-93-113MT ..KB Series Bulletin I27503 08/97 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches)
53-93-113MT..KB Series Bulletin I27503 08/97 www.irf.com Fig. 2 - Forward Voltage Drop Characteristics Fig. 3 - Total Power Loss Characteristics Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Ratings Characteristic 100 110 120 130 0 1 02 03 04 05 06 0 Maximum Allowable Case Temperature (°C) Total Output Current (A) 120° (Rect) 53MT..KB Series 100 1000 01234567 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 53MT..KB Series Per Junction T = 125°CJ 0 25 50 75 100 125 Maxi mum All owable Ambient Temperature (°C) 0.3 K/W0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R thSA
0.12 K/W
0.2 K/W0.4 K/W 100 120 140 160 180 200 220 0 5 10 15 20 25 30 35 40 45 50 55 Total Output Current (A) Maximum Total Power Loss (W) 120° (Rect) 53MT..KB Series T = 125°C J 150 200 250 300 350 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 53MT..KB Series Per Junction Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rated Load Condition And With Rated V Applied Following Surge.RRM J 150 200 250 300 350 400 0.01 0.1 1 Peak Half Sine W ave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V Reapplied J RRM 53MT..KB Series Per Junction
53-93-113MT..KB Series Bulletin I27503 08/97 www.irf.com Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Total Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 6 - Current Ratings Characteristic 100 110 120 130 0 2 04 06 08 0 1 0 0 Maximum Allowab le Case Temperature (°C) Total Output Current (A) 120° (Rect) 93MT..KB Series 100 1000 0 . 511 . 522 . 533 . 54 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 93MT..KB Series Per Junction T = 125°CJ 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
R = 0.05 K/W - Delta R thSA
0.2 K/W
0.4 K/W
0 1 02 03 04 05 06 07 08 09 0 Total Output Current (A) Maximum Total Power Loss (W) 120° (Rect) 93MT..KB Series T = 125°C J 400 450 500 550 600 650 700 750 800 850 11 0 1 0 0 Num ber Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 93MT..KB Series Per Junction At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 300 400 500 600 700 800 900 1000 0.01 0.1 1 Peak Half Sine W ave On-state Current (A) Pulse Train Duration (s) Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 93MT..KB Series Per Junction Initial T = 125°C No Voltage Reapplied Rated V Reapplied Maximum Non Repetitive Surge Current RRM J
53-93-113MT..KB Series Bulletin I27503 08/97 www.irf.com Fig. 12 - Forward Voltage Drop Characteristics Fig. 13 - Total Power Loss Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 11 - Current Ratings Characteristic 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 Maximum Allowable Case Temperature (°C) Total Output Current (A) 120° (Rect) 113MT..KB Series 100 1000 0 . 511 . 522 . 533 . 54 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 113MT..KB Series Per Junction T = 125°CJ 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) R = 0.05 K/W - Delta R thSA 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 Total Output Current (A) Maximum Total Power Loss (W) 120° (Rect) 113MT..KB Series T = 125°C J 400 500 600 700 800 900 1000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Peak Half Sine Wave On-state Current (A) 113MT..KB Series Per Junction Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 Peak Half Sine W ave On-state Current (A) Pulse Train Duration (s) Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 113MT..KB Series Per Junction Initial T = 125°C No Voltage Reapplied Rated V Reapplied Maximum Non Repetitive Surge Current RRM J
53-93-113MT..KB Series Bulletin I27503 08/97 www.irf.com Fig. 16 - Thermal Impedance ZthJC Characteristics Fig. 17 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) Rectangular gate pulse (4)(3) (2)(1) (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) TJ = -40 °C TJ = 25 ° C TJ = 12 5 ° C VGD IGD Frequency Limited by PG(AV) rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs <= 30% rated di/dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs a) Recommended load line for b) Recommended load line for 53/ 93/ 113MT..KB Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJCTransient Thermal Impedance Z (K/W) Per Junction 53MT..KB Series 113MT..KB Series 93MT..KB Series Steady State Value R = 1.07 K/W R = 0.86 K/W R = 0.70 K/W (DC Operation) thJC thJC thJC