111RKI40

111RKI IRF | Alldatasheet

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High current and high surge ratings dv/dt = 1000V/µs option Ceramic housing Threaded studs UNF 1/2 - 20UNF2A Types up to 1200V VRRM /VDRM di/dt = 300A/µs Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 110 A @ T C 90 °C IT(RMS) 172 A ITSM @ 50Hz 2080 A @ 60Hz 2180 A I2t @ 50Hz 21.7 KA 2s @ 60Hz 19.8 KA 2s V DRM /VRRM 400 to 1200 V tq typical 110 µs TJ - 40 to 140 °C Parameters 111RKI Units Major Ratings and Characteristics case style TO-209AC (TO-94)

Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max. V V mA 40 400 500 111RKI 80 800 900 20 120 1200 1300 IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave @ Case temperature 90 °C IT(RMS) Max. RMS on-state current 172 DC @ 83°C case temperature ITSM Max. peak, one-cycle 2080 t = 10ms No voltage non-repetitive surge current 2180 A t = 8.3ms reapplied 1750 t = 10ms 100% V RRM 1830 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 21.7 t = 10ms No voltage Initial TJ = TJ max. 19.8 t = 8.3ms reapplied 15.3 t = 10ms 100% V RRM 14.0 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 217 KA 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance V TM Max. on-state voltage 1.57 V Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse IH Maximum holding current 150 IL Typical latching current 400 0.82 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 2.16 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.70 (I > π x IT(AV)),TJ = TJ max. Parameter 111RKI Units Conditions 1.02 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA 2s V m Ω mA TJ = 25°C, anode supply 6V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω , tr ≤ 1µs of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM , TJ = 25°C ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V dv/dt = 20V/µs , Gate 0V 25Ω Parameter 111RKI Units Conditions td Typical delay time 1 Switching tq Typical turn-off time 110 µs

300 A/µs

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics

Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics

dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/µs TJ = TJ max. linear to 80% rated VDRM Parameter 111RKI Units Conditions 20 mA TJ = TJ max, rated V DRM /VRRM applied PGM Maximum peak gate power 12 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 3.0 TJ = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required TJ = - 40°C to trigger mA TJ = 25°C TJ = 140°C VG T DC gate voltage required TJ = - 40°C to trigger V TJ = 25°C TJ = 140°C IGD DC gate current not to trigger 6.0 mA Parameter 111RKI Units Conditions Triggering TJ = TJ max TYP. MAX. 180 - 80 100 40 - 2.5 - 1.6 2 1 - Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W V TJ = TJ max, tp ≤ 5ms TJ Max. operating temperature range-40 to 140 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case R thCS Ma x. thermal resistance, case to heatsink T Mounting torque, ± 10% 15.5 Non lubricated threads (137)

14 Lubricated threads

(120) wt Approximate weight 130 g Parameter 111RKI Units Conditions

0.27 DC operation

0.1 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification K/W Nm (lbf-in) Case style TO - 209AC (TO-94) See Outline Table VGD DC gate voltage not to trigger 0.25 V

ΔR thJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.043 0.031 TJ = TJ max. 120° 0.052 0.053 90° 0.066 0.071 K/W 60° 0.096 0.101 30° 0.167 0.169 Conduction angleSinusoidal conductionRectangular conductionUnits Conditions Ordering Information Table 11 1 RKI 120Device Code 1 2 54 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 3 - Thyristor 4 - Voltage code: Code x 10 = V RRM (See Voltage Rating Table) 5 - Critical dv/dt:None = 500V/µsec S90 = 1000V/µsec Outline Table Case Style TO-208AD (TO-83) All dimensions in millimeters (inches) 1 0 1/2"-20UNF-2A 29.5 (1.16) M A X . M A X . 4 0 (1 .5 7 ) 1 0 7.5 (0.30) 22.5 DIA. 1 6 .5 (0 .6 5 ) 1 0 (0 .3 9 ) M A X . 5.2 (0.20) DIA. 2 4 (0 .9 4 ) (0 3 9 ) (0.89) MAX. 2 1 (0 .8 3 ) 1.5 (0.06) DIA. (0 .3 9 ) 4 4 (1 .7 3 ) CERAMIC HOUSING FLAG TERMINAL S W 2 7 2.4 (0.09)

Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics C .S . 0 .4 m m 2 2 1 5 (8 .4 6 ) 1 0 (0 .3 9 ) W H IT E G A T E R E D S H R IN K R E D C A T H O D E R E D S IL IC O N R U B B E R 4 .3 (0 .1 7 ) D IA . 2 1 (0 .8 3 ) 1 0 (0 .3 9 ) M A X . 1 5 7 (6 .1 8 ) 1 7 0 (6 .6 9 ) (.0 0 0 6 s.i.) 8 .5 (0 .3 3 ) D IA . 1 6 .5 (0 .6 5 ) M A X . M A X . 5 5 (2 .1 6 ) M IN . CERAMIC HOUSING 2 2 .5 (0 .8 8 ) M A X . D IA . 2 4 (0 .94 ) M A X . S W 2 7 C .S . 1 6 m m 2 F L E X IB L E L E A D (.0 2 5 s.i.) 2 .6 (0 .1 0 ) M A X . 9.5 (0.37) MIN. W H IT E S H R IN K 20 (0.79) MIN. 2 9 .5 (1 .1 6 ) M A X . 1 /2 "-2 0 U N F -2 A AMP. 280000-1 REF-250