110RKI40PBF VISHAY | Alldatasheet

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Document Number: 94379 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Stud Version), 110 A Vishay High Power Products

FEATURES

  • High current and high surge ratings  Hermetic ceramic housing  RoHS compliant  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 110 A TO-209AC (TO-94) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 110 A TC 90 °C IT(RMS) 172 A ITSM

50 Hz 2080

60 Hz 2180

50 Hz 21.7 kA2s 60 Hz 19.8 VDRM/VRRM 400 to 1200 V tq Typical 110 µs TJ - 40 to 140 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 110RKI 111RKI 40 400 500 2080 800 900 120 1200 1300

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 110 A 90 °C Maximum RMS on-state current I T(RMS) DC at 83 °C case temperature 172 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 2080 t = 8.3 ms 2180 t = 10 ms 100 % V RRM reapplied 1750 t = 8.3 ms 1830 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 21.7 kA2s t = 8.3 ms 19.8 t = 10 ms 100 % VRRM reapplied 15.3 t = 8.3 ms 14.0 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 217 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.82 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.02 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 2.16 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 1.70 Maximum on-state voltage V TM Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V Maximum holding current I H TJ = 25 °C, anode supply 6 V resistive load 200 mA Typical latching current I L 400 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

300 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1 µs Typical turn-off time t q ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs VR = 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum rated VDRM/VRRM applied 20 mA

Document Number: 94379 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 Phase Control Thyristors (Stud Version), 110 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 12 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 10 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 - mAT J = 25 °C 80 120 TJ = 140 °C 40 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.6 2 TJ = 140 °C 1 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 6.0 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 140 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to case R thJC DC operation 0.27 K/W Maximum thermal resistance, case to heatsink R thCS Mounting surface, smooth, flat and greased 0.1 Mounting torque, ± 10 % Non-lubricated threads 15.5 (137) N · m (lbf · in) Lubricated threads 14 (120) Approximate weight 130 g Case style See dimensions - link at the end of datasheet TO-209AC (TO-94) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.043 0.031 TJ = TJ maximum K/W 120° 0.052 0.053 90° 0.066 0.071 60° 0.096 0.101 30° 0.167 0.169

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4 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 110 120 130 100 140 Maximum Allowable Case Temperature (°C) Average On-State Current (A) 20 40 60 80 100 1200 30° 60° 90° 120° 180° 111RKI Series RthJC (DC) = 0.27 K/W Ø Conduction angle 100 110 120 130 140 Maximum Allowable Case Temperature (°C) Average On-State Current (A) 4020 60 80 160 180 100 120 1400 DC 30° 60° 90° 120° 180° 111RKI Series RthJC (DC) = 0.27 K/W Ø Conduction period 100 120 140 160 Maximum Average On-State Power Loss (W) Average On-State Current (A) 4020 60 80 100 1200 180° 120° 90° 60° 30° RMS limit 111RKI Series TJ = 140 °C Ø Conduction angle 100 120 140 160 Maximum Average On-State Power Loss (W) Maximum Allowable Ambient Temperature (°C) 4020 60 80 100 1401200

1.5 K/W

4 K/W

5 K/W

0.6 K/W

0.8 K/W

1 K/W

R thSA = 0 .3 K/W - ΔR

2 K/W

R thSA = 0.3 K/W - ΔR 0.6 K/W On-State Power Loss (W) Maximum Allowable Ambient Temperature (°C) 4020 60 80 100 120 1400 100 120 140 180 200 220 160 DC 180° 120° 90° 60° 30° RMS limit 111RKI Series TJ = 140 °C Ø Conduction period 100 120 140 180 200 220 160 Maximum Average On-State Power Loss (W) Average On-State Current (A) 4020 60 80 100 120 140 160 1800

Document Number: 94379 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 Phase Control Thyristors (Stud Version), 110 A Vishay High Power Products Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic 800 1000 1200 1400 1600 1800 2000 Peak Half Sine Wave On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) 10 1001 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 111RKI Series At any rated load condition and with rated VRRM applied following surge Initial TJ = 140 °C 500 1000 1500 2000 2500 Peak Half Sine Wave On-State Current (A) Pulse Train Duration (s) 0.1 1.0 100.01 No voltage reapplied Rated VRRM reapplied 111RKI Series Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial T J = 140 °C 100 1000 10 000 Instantaneous On-State Current (A) Instantaneous On-State Voltage (V) 21 3 4 50 111RKI Series TJ = 25 °C TJ = 140 °C 0.001 0.01 0.1 1.0 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (K/W) 1.0 10 111RKI Series Steady state value RthJC = 0.27 K/W (DC operation)

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6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 1.0 100 0.001 0.01 0.1 1.0 10 Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) 100 1000 VGD IGD (b) (a) (1) (3) Frequency limited by PG(AV) TJ = 25 °C TJ = 40 °C TJ = 140 °C (2) (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 µs Device: 111RKI Series (4) Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω t r ≤ 0.5 µs, tp ≥ 6 µs b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω t r ≤ 1 µs, tp ≥ 6 µs -I T(AV) rated average output current (rounded/10) - 0 = Eyelet terminals (gate and auxiliary cathode leads) - Thyristor - Lead (Pb)-free 1 = Fast-on terminals (gate and auxiliary cathode leads) - Voltage code x 100 = V RRM (see Voltage Ratings table) Device code 513 24 11 0 RKI 120 PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95003

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.