SW110N08A SEMIPOWER | Alldatasheet
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Features
■ High ruggedness ■ RDS(ON) (Max 7.2m Ω)@VGS=10V ■ Gate Charge (Typ 107nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel TO-220 MOSFET Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain to Source Voltage 80 V ID Continuous Drain Current (@TC=25oC) 110* A Continuous Drain Current (@TC=100oC) 69.3* A IDM Drain current pulsed (note 1) 440 A VGS Gate to Source Voltage ± 20 V EAS Single pulsed Avalanche Energy (note 2) 1052 mJ EAR Repetitive Avalanche Energy (note 1) 147 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns PD Total power dissipation (@TC=25oC) 266.3 W Derating Factor above 25oC 2.1 W/oC TSTG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 0.47 oC/W Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 50.9 oC/W *. Drain current is limited by junction temperature. BVDSS : 80V ID : 110A RDS(ON) : 7.2mΩ SW110N08A SAMWIN Item Sales Type Marking Package Packaging
1 SW P 110N08 SW 110N08A TO-220 TUBE
- Gate 2. Drain 3. Source 1 2 3 TO-220
Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 80 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.07 V/oC IDSS Drain to source leakage current VDS=80V, VGS=0V 1 uA VDS=64V, TC=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA VGS=-20V, VDS=0V -100 nA Gate to source leakage current, reverse On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2 4 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 55A 5 7.2 mΩ Gfs Forward Transconductance VDS =20V, ID = 20A 70 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=25V, f=1MHz 4588 pF Coss Output capacitance 618 Crss Reverse transfer capacitance 433 td(on) Turn on delay time VDS=40V, ID=40A, RG=25Ω (note 4，5) 40 70 ns tr Rising time 114 150 td(off) Turn off delay time 189 240 tf Fall time 138 180 Qg Total gate charge VDS=64V, VGS=10V, ID=40A (note 4，5) 107 150 nC Qgs Gate-source charge 15 Qgd Gate-drain charge 52 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 110 A ISM Pulsed source current 440 A VSD Diode forward voltage drop. IS=55A, VGS=0V 1.5 V Trr Reverse recovery time IS=40A, VGS=0V, dIF/dt=100A/us 33 ns Qrr Reverse recovery Charge 42 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 0.17mH, IAS = 110A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 110A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. SW110N08A SAMWIN
drain current and gate voltage Fig. 3. Gate charge characteristics SW110N08A SAMWIN Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature
Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve VDD DUT VDS RL RGS 10VIN 10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 9. Gate charge test circuit & waveform Fig.10. Switching time test circuit & waveform VDS Same type as DUT DUT VGS 5mA QG QGS QGD VGS Charge nC 10V
Fig. 11. Unclamped Inductive switching test circuit & waveform SW110N08A SAMWIN Fig.12 . Peak diode recovery dv/dt test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD