10V150D YFWDIODE | Alldatasheet

Document overview

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Technical content

Features

Advanced trench technology Low forward voltage drop Low power losses High efficiency operation

  • Lead Free Finish, RoHS Compliant

Applications

Maximum ratings and electrical characteristics (TJ = 25° C unless otherwise noted) Notes: (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≦ 40 ms D Trench MOS Barrier Schottky Rectifier Parameter Symbol Limit Unit Maximum repetitive peak reverse voltage VRRM 150 V Maximum average forward rectified current per device IF(AV) 10 A Peak forward surge current 8.3 ms single half sine- wave superimposed on rated load per diode IFSM 280 A TJ, TSTG -65 to +150 °C RƟJC °C/W Operating junction and storage temperature range Typical thermal resistance per leg 6 Instantaneous forward voltage per diode VF(1) TYP. MAX. IF=10A TJ=25°C 0.71 0.78 V IF=10A TJ=125°C - Instantaneous reverse current per diode at rated reverse voltage TJ=25°C IR(2) - 50 uA TJ=125°C - 10 mA 0.65 IF=2A IF=2A TJ=25°C TJ=125°C 0.56 0.50 TSP10V150D TO-252 TO-252 www.yfwdiode.com

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Peak Forward Surge Current (A) 20 210 180 150 120 5 60 25 50 75 100 125 150 175 100 100 Tc, Case Temp (oC) Current Derating, Case Number of Cycles at 60 Hz Maximum Repetitive Surge Current 1000 Tj=125℃ 100 0.1 Tj=100℃ Tj=25℃ 0.1 200 300 400 500 600 700 800 900 0.01 60 90 120 150 Vf, Instantaneous Forward Voltage (mV) Typical Forward Voltage VR, Reverse Voltage (Volts) Typical Reverse Current 10000 1000 100 0 1 10 100 Reverse Voltage (V) Typical Junction Capacitance If, Instantaneous Forward Current (A) If, Average Forward Current (A) Capacitance (pF) Ir, Reverse Current (uA) Tj=75℃ Tj=125℃ Tj=100℃ Tj=75℃ Tj=25℃ D www.yfwdiode.com

PACKAGE OUTLINE DIMENSIONS D www.yfwdiode.com