10TTS08S

10TTS08S IRF | Alldatasheet

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Preliminary Data Sheet I2145 12/97 SAFEIR Series 10TTS08S VT < 1.15V @ 6.5A ITSM = 140A VRRM = 800V Major Ratings and Characteristics D 2 PAK (SMD-220) IT(AV) Sinusoidal 6.5 A waveform IRMS 10 A VRRM / VDRM 800 V ITSM 140 A VT @ 6.5 A, TJ = 25°C 1.15 V dv/dt 150 V/µs di/dt 100 A/µs TJ range - 40 to 125 °C Characteristics 10TTS08S Units Output Current in Typical Applications TA = 55°C, TJ = 125°C, footprint 300mm2 NEMA FR-4 or G10 glass fabric-based epoxy 2.5 3.5with 4 oz (140µm) copper Aluminum IMS, RthCA = 15°C/W 6.3 9.5 A Aluminum IMS with heatsink, RthCA = 5°C/W 14.0 18.5 Applications Single-phase Bridge Three-phase Bridge Units Description/Features The 10TTS08S SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identi- cal package outlines. Package Outline

Preliminary Data Sheet I2145 12/97 VRRM , maximum V DRM , maximum I RRM /IDRM Part Number peak reverse voltage peak direct voltage 1 25°C VV m A 10TTS08S 800 800 1.0 Voltage Ratings IT(AV) Max. Average On-state Current 6.5 A @ T C = 112° C, 180° conduction half sine wave IT(RMS) Max. RMS On-state Current 10 ITSM Max. Peak One Cycle Non-Repetitive 120 A 10ms Sine pulse, rated VRRM applied, TJ = 125°C Surge Current 140 10ms Sine pulse, no voltage reapplied, TJ = 125°C I2t Max. I 2t for fusing 72 A 2s 10ms Sine pulse, rated VRRM applied, TJ = 125°C 100 10ms Sine pulse, no voltage reapplied, TJ = 125°C I2√t Max. I2√t for fusing 1000 A 2√s t = 0.1 to 10ms, no voltage reapplied, TJ = 125°C VTM Max. On-state Voltage Drop 1.15 V @ 6.5A, TJ = 25°C rt On-state slope resistance 17.3 m Ω TJ = 125°C VT(TO) Threshold Voltage 0.85 V IRM /IDM Max.Reverse and Direct 0.05 mA T J = 25 °C Leakage Current 1.0 T J = 125 °C IH Typ. Holding Current 30 mA Anode Supply = 6V, Resistive load, Initial I T=1A IL Max. Latching Current 50 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 150 V/µs T J = 25°C di/dt Max. rate of rise of turned-on Current 100 A/µs Absolute Maximum Ratings Parameters 10TTS08S Units Conditions VR = rated VRRM / VDRM

Preliminary Data Sheet I2145 12/97 Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 20 mA Anode supply = 6V, resistive load, T J = - 65°C to trigger 15 Anode supply = 6V, resistive load, T J = 25°C

10 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 1.2 V Anode supply = 6V, resistive load, T J = - 65°C to trigger 1 Anode supply = 6V, resistive load, T J = 25°C

0.7 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger 0.2 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 0.1 mA T J = 125°C, VDRM = rated value Parameters 10TTS08S Units Conditions Switching Parameters 10TTS08S Units Conditions tgt Typical turn-on time 0.8 µs T J = 25°C trr Typical reverse recovery time 3 T J = 125°C tq Typical turn-off time 100 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 °C Soldering Temperature 240 °C for 10 seconds (1.6mm from case) RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case R thJA Typ. Thermal Resistance Junction 40 °C/W to Ambient (PCB Mount) wt Approximate Weight 2 (0.07) g (oz.) T Case Style D 2 Pak (SMD-220) Thermal-Mechanical Specifications Parameters 10TTS08S Units Conditions When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994

Preliminary Data Sheet I2145 12/97 Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 105 110 115 120 125 01234567 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduct ion Angle Average On-state Current (A) 10TTS08 R (DC) = 1.5 K/WthJC 105 110 115 120 125 02468 1 0 1 2 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 10TTS08 R (DC) = 1.5 K/WthJC 01234567 RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) 180° 120° 90° 60° 30° 10TTS08 T = 125°C J 02468 1 0 1 2 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 10TTS08 T = 125°CJ 100 110 120 130 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Peak Half Sine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 10TTS08 100 110 120 130 140 150 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Ver su s Puls e Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J 10TTS08

Preliminary Data Sheet I2145 12/97 Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 0 . 511 . 522 . 533 . 5 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°CJ 10TTS08 0.01 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Steady State Value (DC Operation) Single Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 thJCTransie nt Thermal Impedance Z (°C/W) 10TTS08

Preliminary Data Sheet I2145 12/97 9G3A 10TTS08S 9512 EXAMPLE: THIS IS AN 10TTS08S INTERNATIONAL RECTIFIER LOGO PART NUMBER Marking Information DATE CODE (YYWW) YY = YEAR WW = WEEK ASSEMBLY LOT CODE T ape & Reel Information Dimensions in millimeters and inches TRR FEED DIRECTIO N TRL FEED DIRECTIO N 10.90 (0.429) 15.90 (0.626) 1.75 (0.069) 1.25 (0.049) 1.85 (0.073) 1.65 (0.065) 4.10 (0.161) 3.90 (0.153) 1.60 (0.063) 1.50 (0.059) DIA. 1.60 (0.063) 1.50 (0.059) DIA. 11.60 (0.457) 11.40 (0.449) 15.42 (0.609) 15.22 (0.601) 4.72 (0.186) 4.52 (0.178) 24.30 (0.957) 23.90 (0.941) 0.368 (0.0145) 0.342 (0.0135) 360 (14.173) DIA. MAX. 26.40 (1.039) 24.40 (0.961) 13.50 (0.532) 12.80 (0.504)DIA. 60 (2.362) DIA. MIN. SMD-220 Tape & Reel When ordering, indicate the part number, part orientation, and the quantity. Quantities are in multiples of 800 pieces per reel for both TRL and TRR. (K) (G) (A)

Preliminary Data Sheet I2145 12/97 Outline Table (K) (G) 1 (K) Cathode 2 (A) Anode 3 (G) Gate (A) 10.16 (0.40) REF. 8.89 (0.35) 4.57 (0.18) 4.32 (0.17) 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.47 (0.25) 6.18 (0. 24)93° RE F. 2.61 (0. 10) 2.32 (0. 09) 5.28 (0.21) 4.78 (0.19) 4.69 (0.18) 4. 20 (0.16) 0.55 (0.02) 0.46 (0.02) 14.73 (0.58) 15.49 (0.61) 1.40 (0.055) 1.14 (0.045)3X 0.93 (0.37) 0.69 (0.27)2X 11.43 (0.45) 17.78 (0.70) 8.89 (0.35) 3.81 (0.15) 2.08 (0.08) 2X 2.54 (0.10) MINIMUM RECOMMENDED F OOTPRINT

10 T T S 08 S TRL

Ordering Information Table 1 - Current Rating, RMS value 2 - Circuit Configuration T = Single Thyristor T = TO-220AC 4 - Type of Silicon S = Converter Grade 5 - Voltage code: Code x 100 = VRRM 6 - S = TO-220 D2Pak (SMD 220) Version 7 - Tape and Reel Option TRL = Left Reel TRR = Right Orientation Reel Dimensions in millimeters and inches (G) 3 (A) 1 (K)

Preliminary Data Sheet I2145 12/97 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A Tel: (310) 322-3331 Fax: (310) 322-3332 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020 Fax: ++ 44 1883 733408 IR CANADA: 7231 Victoria Park Ave., Suite #201, Markham, Ontario L3R 2Z8 Tel: (905) 475 1897. Fax: (905) 475 8801 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 Fax: ++ 49 6172 965933 IR ITALY:Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 4510111 Fax: ++ 39 11 4510220 IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 Fax: 81 3 3983 0642 IR SOUTHEAST ASIA:315 Outram Road, # 10-02 Tan Boon Liat Building, SINGAPORE 0316. Tel: 65 221 8371. Fax: 65 221 8372. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 12/97