10SQ050 THINKISEMI | Alldatasheet
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Technical content
Maximum Repetitive Peak Reverse Voltage V RRM 50 V Maximum RMS Voltage V RMS 35 V Maximum DC Blocking Voltage V DC(AV) 50 V Average Rectified Output Current @Tc=130°C I F 10 A Peak Forward Surge Current 8.3ms single half sine-wave Tj=25°C I FSM 250 A Maximum Forward Voltage at 10A DC Note(1) Tj=25°C V F 0.55 V Maximum DC Reverse Current at Rated DC Blocking Voltage Tj=25°C Tj=100°C IR 0.05 10 mA Typical thermal resistance Junction to Case (Note 3) R Θ JC 11 °C/W Typical thermal resistance Junction to Ambient (Note 3) R Θ JA 28 °C/W Typical Thermal Resistance (Note 2) C J 720 pF Operating junction temperature T J 125 °C Junction temperature in DC forward current without reverse bias, t ≦ 1 h Tj (Note 4) ≦200 °C Storage temperature range T STG -55 to +150 °C Note : (1) 300us Pulse Width, 2% Duty Cycle. (2) Measured at 1.0MHz and applied reverse voltage of 4.0 V DC (3) Thermal Resistance test performed in accordance with JESD-51. (4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Case: R-6 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.072 ounce, 2.05 grams MECHANICAL DATA R-6 0.360 (9.1) 0.340(8.6) DIA. 0.052 (1.3) 0.048 (1.2) DIA. 0.360(9.1) 0.340(8.6) Dimensions in inches and (millimeters) 1.0 (25.4) MIN. 1.0 (25.4) MIN. 10SQ050 Pb Free Plating Product 10SQ050 10A,50V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode Pb © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05
FIG.1- FORWARD CURRENT DERATING CURVE 0 25 50 75 100 125 150 175 200 CASE TEMPERATURE, ( C) AVERAGE FORWARD CURRENT, (A) FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT 100 150 200 250 1 1 0 100 NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT, (A) FIG.3- TYPICAL JUNCTION CAPACITANCE 100 1000 10000 1 10 100 REVERSE,VOLTAGE Capacitance,(pF) FIG.4- TYPICAL FORWARD CHARACTERISTICS 0.1 100 INSTANTANEOUS FORWARD VOLTAGE, (V) INSTANTANEOUS FORWARD CURRENT, (A) FIG.5- TYPICAL REVERSE CHARACTERISTICS 0.001 0.01 0.1 100 0 20 4 0 60 80 100 12 0 PERCENT OF RATED PEAK REVERSE VOLTAGE, (V) INSTANTANEOUS REVERSE CURRENT, (mA) O PULSE WIDTH 300us, 2% Duty Cycle 8.3ms Single Half Sine-Wave RESISTIVE OR INDUCTIVE LOAD Tj=25°C Tj=125°C Tj=25°C, Tj=150°C Tj=50°C Tj=75°C Tj=100°C Tj=125°C 10SQ050 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05 RATINGS AND CHARACTERISTIC CURVES