10SQ030 NAINA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Naina Semiconductor Ltd. 10SQ030 thru 10SQ100
1 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Schottky Barrier Rectifier, 10.0 A Features Mechanical Data
- Diffused junction • Case: JEDEC R-6 molded plastic
- Low cost • Polarity: Color band denotes cathode
- Low reverse leakage current • Weight: 2.1 grams
- High surge current capability & low forward voltage drop • Mounting position: Any
- Polarity: Color Band denotes Cathode
- High efficiency JEDEC R-6 NOTES: (1) 300 µs, pulse width, 2% duty cycle (2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC. Thermal Specifications (T C = 25 oC unless otherwise specified) Parameters Symbol Values Units Maximum operating junction temperature range T J -55 to +150 oC Maximum storage temperature range T STG -55 to +150 oC Typical thermal resistance junction to case R θJC 3.0 oC/W Electrical Characteristics (T C = 25 oC unless otherwise specified) Parameter Symbol 12SQ030 12SQ035 12SQ040 12SQ045 12 SQ050 12SQ060 12SQ080 12SQ100 Units Maximum repetitive peak reverse voltage VRRM 30 35 40 45 50 60 80 100 V Maximum RMS voltage VRMS 21 24.5 28 31.5 35 42 56 70 V Maximum DC blocking voltage VDC 30 35 40 45 50 60 80 100 V Maximum average forward output current @ T C = 950C IF(AV) 10 A Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load IFSM 275 A Forward voltage drop @ 10A DC (Note 1) VF 0.55 0.7 0.8 V Typical junction capacitance (Note 2) CJ 450 pF Maximum DC reverse current at rated DC blocking voltage T A = 25 0C IR 0.5 mA TA = 100 0C 50
Naina Semiconductor Ltd. 10SQ030 thru 10SQ100
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outlines R-6 Dimensions in inches and (millimeters)