10RIA40S90

10RIA IRF | Alldatasheet

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Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1200V V DRM / VRRM Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Case Style TO-208AA (TO-48) www.irf.com

Bulletin I2405 rev. A 07/00 2 www.irf.com IT(AV) Max. average on-state current 10 A 180° conduction, half sine wave @ Case temperature 85 °C IT(RMS) Max. RMS on-state current 25 A ITSM Max. peak, one-cycle 225 t = 10ms No voltage non-repetitive surge current 240 t = 8.3ms reapplied 190 t = 10ms 100% V RRM 200 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 255 t = 10ms No voltage Initial T J = TJ max. 233 t = 8.3ms reapplied 180 t = 10ms 100% V RRM 165 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 2550 A 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low level value of threshold 1.10 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. voltage VT(TO) 2 High level value of threshold 1.39 (I > π x IT(AV)), TJ = TJ max. voltage rt1 Low level value of on-state 24.3 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state 16.7 (I > π x IT(AV)), TJ = TJ max. slope resistance VTM Max. on-state voltage 1.75 V I pk= 32A, TJ = 25°C tp = 10ms sine pulse IH Maximum holding current 130 IL Typical latching current 200 Parameter 10RIA Units Conditions On-state Conduction A2s mΩ V A mA TJ = 25°C, anode supply 12V resistive load Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max. VV m A 10 100 150 20 20 200 300 40 400 500 60 600 700 10RIA 80 800 900 10 100 1000 1100 120 1200 1300 ELECTRICAL SPECIFICATIONS Voltage Ratings (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms

Bulletin I2405 rev. A 07/00 3www.irf.com dv/dt Max. critical rate of rise of 100 T J = TJ max. linear to 100% rated VDRM off-state voltage 300 (*) T J = TJ max. linear to 67% rated VDRM V/µs Parameter 10RIA Units Conditions Blocking PGM Maximum peak gate power 8.0 T J = TJ max. PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 1.5 A T J = TJ max. -VGM Maximum peak negative 10 V T J = TJ max. gate voltage IGT DC gate current required 90 T J = - 65°C to trigger 60 mA T J = 25°C

35 T J = 125°C

VGT DC gate voltage required 3.0 T J = - 65°C to trigger 2.0 V T J = 25°C

1.0 V T J = 125°C

IGD DC gate current not to trigger 2.0 mA T J = TJ max., VDRM = rated value VGD DC gate voltage not to trigger 0.2 V T J = TJ max. VDRM = rated value W Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Parameter 10RIA Units Conditions Triggering di/dt Max. rate of rise of turned-on T J = TJ max., VDM = rated VDRM current V DRM ≤ 600V 200 A/µs Gate pulse = 20V, 15Ω , tp = 6µs, tr = 0.1µs max. VDRM ≤ 800V 180 I TM = (2x rated di/dt) A VDRM ≤ 1000V 160 VDRM ≤ 1600V 150 tgt Typical turn-on time 0.9 T J = 25°C, at = rated VDRM/VRRM, TJ = 125°C trr Typical reverse recovery time 4 µs T J = TJ max., ITM = IT(AV), tp > 200µs, di/dt = -10A/µs tq Typical turn-off time 110 T J = TJ max., ITM = IT(AV), tp > 200µs, VR = 100V, di/dt = -10A/µs, dv/dt = 20V/µs linear to 67% V DRM, gate bias 0V-100W Parameter 10RIA Units Conditions Switching (**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90. (*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.

Bulletin I2405 rev. A 07/00 4 www.irf.com TJ Max. operating temperature range - 65 to 125 °C Tstg Max. storage temperature range - 65 to 125 °C RthJC Max. thermal resistance, 1.85 K/W DC operation junction to case RthCS Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased case to heatsink T Mounting torque to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm Case style TO-208AA (TO-48) See Outline Table Parameter 10RIA Units Conditions Thermal and Mechanical Specification ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.44 0.32 K/W T J = TJ max. 120° 0.53 0.56 90° 0.68 0.75 60° 1.01 1.05 30° 1.71 1.73 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Ordering Information Table

10 RIA 120 M S90

3 - Voltage code: Code x 10 = V RRM (See Voltage Rating Table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1 5 - Critical dv/dt: None = 300V/µs (Standard value) S90 = 1000V/µs (Special selection) wt Approximate weight 14 (0.49) g (oz)

Bulletin I2405 rev. A 07/00 5www.irf.com Outline Table Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic Case Style TO-208AA (TO-48) All dimensions in millimeters (inches) 100 110 120 130 0 2 4 6 8 1 01 21 41 61 8 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Angle 10RIA Series R (DC) = 1.85 K/WthJC 100 110 120 130 0 5 10 15 20 25 30 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 10RIA Series R (DC) = 1.85 K/WthJC

Bulletin I2405 rev. A 07/00 6 www.irf.com Fig. 3 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-state Power Loss Characteristics 02 5 5 0 7 5 1 0 0 1 2 5 Maximum Allowable Ambient Temperature (°C)

10 K/W

7 K/W

5 K/W

4 K/W

3 K/W

2 K/W

R = 1 K/W - Delta R thSA 0 2 4 6 8 10 12 14 16 18 RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) 180° 120° 90° 60° 30° 10RIA Series T = 125°CJ 02 5 5 0 7 5 1 0 0 1 2 5 Maximum Allowable Ambient Temperature (°C) R = 1 K/W - Delta R thSA 0 5 10 15 20 25 30 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 10RIA Series T = 125°CJ 100 110 120 130 140 150 160 170 180 190 200 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge. Peak Half Sine Wave On-state Current (A) 10RIA Series Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s RRM J 100 120 140 160 180 200 220 240 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V Reapplied J RRM 10RIA Series

Bulletin I2405 rev. A 07/00 7www.irf.com Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z thJC Characteristics Fig. 9 - Gate Characteristics 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJCTransient Thermal Impedance Z (K/W) Steady State Value R = 1.85 K/W (DC Operation) thJC 10RIA Series 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) (1) (2) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) Recommended load line for b) Recommended load line for Rectangular gate pulse tr<=1 µs, tp >= 6 µs rated di/dt : 10V, 20ohms <=30% rated di/dt : 10V, 65ohms (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 60W, tp = 1ms tr <=0.5 µs, tp >= 6 µs (3) (4) Tj = -65 °C Tj = 25 °C Tj = 125 °C 10RIA Series Frequency Limited by PG(AV) 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 10RIA Series T = 125 CJ T = 25 CJ

Bulletin I2405 rev. A 07/00 8 www.irf.com EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.