STP10NK80Z_V01 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuit
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability

Applications

■ Switching application

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic

  1. Pulsed: pulse duration= 300µs, duty cycle 1.5%
  2. C oss eq. is defined as a constant equivalent capac itance giving the same charging time as C oss when VDS

Table 7. Switching times Table 8. Gate-source zener diode

  1. The built-in back-to-back Zener diodes have specif ically been designed to enhance not only the device’s

usage of external components. Table 9. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration= 300µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

3 Test circuit

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

4 Package mechanical data

Table 10. TO-220 type A mechanical data

Figure 25. TO-220 type A drawing

Table 11. TO-220FP mechanical data

Figure 26. TO-220FP drawing

Table 12. TO-247 mechanical data

Figure 27. TO-247 drawing

5 Revision history

Table 13. Document revision history Content reworked to improve readability. Minor text changes in cover page. Updated Section 4: Package mechanical data.