10N80L-T3P-T

10N80 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-218.D 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 1.1Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 10N80L-T3P-T 10N80G-T3P-T TO-3P G D S Tube 10N80L-TF1-T 10N80G-TF1-T TO-220F1 G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 8 . D „ ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current (TC = 25°С) I D 10 A Pulsed Drain Current (Note 2) I DM 40 A Avalanche Current (Note 2) I AR 10 A Single Pulsed (Note 3) E AS 920 mJ Avalanche Energy Repetitive (Note 2) E AR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation TO-220F1 36 W TO-3P 1.92 Linear Derating Factor above TC = 25°С TO-220F1 PD 0.288 °С/W Junction Temperature T J 150 ° С Storage Temperature T STG -55 ~ +150 ° С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature. 3. L=17.3mH, I AS=10A, VDD=50V, RG=25Ω, Satarting TJ=25°C 4. I SD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-3P 40 Junction to Ambient TO-220F1 θJA 62.5 °С/W TO-3P 0.52 Junction to Case TO-220F1 θJC 3.47 °С/W „ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0 V, ID =250 µA 800 V VDS =800V, VGS =0 V 10 Drain-Source Leakage Current I DSS VDS =640V, TC =125°C 100 µA Gate-Body Leakage Current I GSS V DS =0 V, VGS = ±30 V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ I D =250 µA, Referenced to 25°C 0.98 mV/° С ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =VGS, ID =250 µA 3.0 5.0 V Static Drain-Source On-Resistance R DS(ON) V GS = 10 V, ID = 5.0 A 0.93 1.1 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2150 2800 pF Output Capacitance C OSS 180 230 pF Reverse Transfer Capacitance C RSS VDS =25V, VGS =0V, f=1MHz 15 20 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 50 110 Turn-ON Rise Time t R 130 270 Turn-OFF Delay Time t D(OFF) 90 190 Turn-OFF Fall-Time t F VDD=400V, ID=10.0A, RG=25Ω(Note 1,2) 80 170 ns Total Gate Charge Q G 45 58 Gate Source Charge Q GS 13.5 Gate Drain Charge Q GD VDS =640V, VGS =10V, ID =10.0A (Note 1,2) 17 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 8 . D „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=10.0 A,VGS= 0 V 1 . 4 V Maximum Continuous Drain-Source Diode Forward Current IS 10.0 Maximum Pulsed Drain-Source Diode Forward Current ISM 40.0 A Reverse Recovery Time t RR 730 ns Reverse Recovery Charge Q RR VGS = 0 V, dIF /dt = 100 A/µs, IS = 10.0 A (Note 1) 10.9 nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Independent of oper ating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 8 . D „ TEST CIRCUIT Switching Test Circuit Switching Waveforms G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 8 . D „ TEST CIRCUIT(Cont.) Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Test Circuit

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 1 8 . D „ TYPICAL CHARACTERISTICS 2000 Drain Current vs. Source to Drain Voltage Source to Drain Voltage,VSD (mV) 800400 600 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (V) 1000 0.5 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage,VTH (V) 2.5 1.5 Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage,BVDSS(V) 600 250 200 100 150 200 300 400 800 350 400 24 3 1000 423 VGS=10V, ID=5A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.