10N70L-TF2-T

UNISONIC TECHNOLOGIES CO., LTD

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UNISONIC TECHNOLOGIES CO., LTD 10N70 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-572.F 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) <1.2Ω@ VGS = 10V, ID = 5A * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 10N70L-TF1-T 10N70G-TF1-T TO-220F1 G D S Tube 10N70L-TF2-T 10N70G-TF2-T TO-220F2 G D S Tube 10N70L-TF3-T 10N70G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R502-572.F  MARKING

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R502-572.F  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 700 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 10 A Drain Current Continuous I D 10 A Pulsed (Note 2) I DM 40 A Avalanche Energy Single Pulsed (Note 3) E AS 600 mJ Repetitive (Note 2) E AR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those val ues beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 12mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.5 °C/W

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R502-572.F  ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = 250μA 700 V Drain-Source Leakage Current I DSS V DS = 700V, VGS = 0V 10 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse V GS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 5A 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0 MHz 890 pF Output Capacitance C OSS 200 pF Reverse Transfer Capacitance C RSS 65 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) 78 ns Turn-On Rise Time t R 200 ns Turn-Off Delay Time t D(OFF) 275 ns Turn-Off Fall Time t F 180 ns Total Gate Charge Q G VDS=50V, ID=1.3A, VGS=10 V IG = 100μA (Note 1, 2) 50 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD 16 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 40 A Reverse Recovery Time t rr VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) 420 ns Reverse Recovery Charge Q RR 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R502-572.F  TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R502-572.F  TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R502-572.F  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 2413 100 150 200 250 300 0 200 600 800 1000400 0 100 150 200 250 300 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 012 3 4 VGS=10V, ID=5A 5 0 Continuous Drain-Source Diode Forward Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Continuous Drain-Source Diode Forward Current, IS (A) 0.25 0.5 0.75 1 1.25 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.