10N65F CHENDA | Alldatasheet
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◆10A, 650V, RDS(on) =0.85 Ω@VGS=10V ◆Fast Switching ◆Improved dv/dt capability ◆100% avalanche tested ◆Low gate charge Application ◆Electronic Ballast ◆Electronic Transformer ◆Switching mode power supply Absolute Maximum Ratings(Tc=25° C unless otherwise noted) Symbol Parameters Value Unit VDSS Drain-source Voltage 650 V VGS Gate-source Voltage ±30 V ID Continuous Drain Current --TC=25°C A --TC=100°C 5.8 A IDM Drain Current-Pulsed ① A PD Power Dissipation --(TC = 25° C) W Derate above 25° C 4.8 W/° C Tj Junction Temperature 150 TSTG Storage Temperature -55-150 EAS Single Pulse Avalanche Energy② 250 mJ IAR Avalanche Current① A Thermal Characteristics Symbol Parameters Min Typ Max Unit RθJC Thermal Resistance Junction-case 2.5 ° C /W RθJA Thermal Resistance Junction-ambient 62.5 ° C /W F10N65 650V N-Channel Power MOSFET
Electronic Characteristics(Tc=25° C unless otherwise noted) Symbol Characteristics Test condition Min Typ Max Unit Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA 650 V △BVDSS/△Tj Breakdown Voltage Temperature Coefficien ③ ID=250μA (Referenced to 25℃)
0.7 V/℃
IDSS Drain-source Leakage Current VDS=650V,VGS=0V 1 μA VDS=520V,Tj=125℃ 10 μA IGSSF Gate-body Leakage Current VGS=+20V 10 μA IGSSR VGS=-20V -10 μA On Characteristics VGS(th) Gate Threshold Voltage VGS=VDS,ID=250μA 2.0 4.0 V RDS(on) Static Drain-source On Resistance VGS=10V,ID=5.0A 0.85 Ω gFS Forward Transconductance VDS=40V,ID=5.0A 8.0 S Dynamic and Switching Characteristics Ciss Input Capacitance VGS=0V,VDS=25V,f=1.0MHZ 1758 pF Coss Output Capacitance 153 pF Crss Reverse Transfer Capacitance 15 pF td(on) Turn-On Delay Time VDD = 325V, ID = 10 A, RG = 25 Ω③ 56 ns tr Turn-On Rise Time 150 ns td(off) Turn-Off Delay Time 300 ns tf Turn-Off Fall Time 166 ns Qg Total Gate Charge VDS = 520 V, ID = 10 A, VGS = 10 V③ 45 nC Qgs Gate-Source Charge 6.8 nC Qgd Gate-Drain Charge 18.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-source Diode Forward Current 10 A ISM Maximum Pulsed Drain-Source Diode Forward Current 40 A VSD Drain-source Forward Voltage Tj=25℃,IS=10A,VGS =0V 1.5 V Notes ： ①Repetitive Rating:Pulse width limited by maximum junction temperature ②EAS Test condition L =12mH, IAS =10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25° C ③ Pulse Test : Pulse width ≤300 µ s, Duty cycle≤2%
/ 4 Symbol Min Max Symbol Min Max A 9.96 10.36 D A1 D1 1.25 1.35 A3 9.25 9.65 D3 0.28 0.48 B1 15.7 16.1 E 2.34 2.74 B2 4.5 4.9 E1 B3 4.6 5 E2 C 3.2 3.4 E3 0.36 0.65 C1 15.6 16 E4 2.55 2.95 C2 9.55 9.95 α(度) 0.7 1.0× 45° 30° Typ.2.54