10N65 FCI | Alldatasheet
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■ RDS(on) (Typical 0.70 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Symbol 2. Drain 3. Source 1. Gate TO-220F 1 2 3 FMF10N65 10Amps 650 Voltage N Channel MOSFET
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 650 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.7 - V/°C IDSS Drain-Source Leakage Current VDS = 650V, VGS = 0V -- 1 0 u A VDS = 520V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 5.0A -0 . 7 0 0 . 8 5 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 1600 - pFCoss Output Capacitance - 170 - Crss Reverse Transfer Capacitance - 20 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =325V, ID =10.0A, RG =4.7Ω (Note 4, 5) - 30 - ns tr Rise Time - 70 - td(off) Turn-off Delay Time - 150 - tf Fall Time - 80 - Qg Total Gate Charge VDS =520V, VGS =10V, ID =10.0A (Note 4, 5) - 45 - nCQgs Gate-Source Charge - 7- Qgd Gate-Drain Charge(Miller Charge) - 20 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 1 0 AISM Pulsed Source Current - - 40 VSD Diode Forward Voltage I S =10A, VGS =0V - - 1.4 V trr Reverse Recovery Time IS=10A, VGS=0V, dIF/dt=100A/us -4 5 0 - n s Qrr Reverse Recovery Charge - 4.5 - uC ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 15.0mH, IAS =10.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 10.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. FMF10N65 10Amps 650 Voltage N Channel MOSFET