10N60ZG-TF1-T

10N60Z-Q UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-B05.a 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) < 0.8Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 10N60ZL-TF1-T 10N60ZG-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source „ MARKING

1 0 N 6 0 Z - Q Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - B 0 5 . a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ± 20 V Avalanche Current (Note 2) I AR 10 A Drain Current Continuous I D 10 A Pulsed (Note 2) I DM 38 A Avalanche Energy Single Pulsed (Note 3) E AS 445 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation P D 50 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 8.9mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.5 °C/W

1 0 N 6 0 Z - Q Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - B 0 5 . a „ ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250μA 600 V Drain-Source Leakage Current I DSS V DS=600V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=20 V, VDS=0V 5 µA Reverse V GS=-20 V, VDS=0V -5 µA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5A 0.7 0.8 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0 MHz 790 1020 pF Output Capacitance C OSS 139 180 pF Reverse Transfer Capacitance C RSS 22 28 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDS=30V, ID=0.5A, RG =25Ω (Note1, 2) 56 70 ns Turn-On Rise Time t R 110 170 ns Turn-Off Delay Time t D(OFF) 300 360 ns Turn-Off Fall Time t F 160 240 ns Total Gate Charge Q G VDS=50V, ID=1.3A, VGS=10 V (Note1, 2) 43 56 nC Gate-Source Charge Q GS 7 nC Gate-Drain Charge Q GD 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS=0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature.

1 0 N 6 0 Z - Q Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - B 0 5 . a „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

1 0 N 6 0 Z - Q Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - B 0 5 . a „ TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

1 0 N 6 0 Z - Q Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - B 0 5 . a UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.