10N60KG-TQ2-R

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UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R205-022.h 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic ations in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 0.75Ω @ VGS =10V, ID = 5 A * Low gate charge ( typical 33 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL TO-220 TO-220F TO-220F1 TO-220F2 TO-263 TO-220F3  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 10N60KL-TA3-T 10N60KG-TA3-T TO-220 G D S Tube 10N60KL-TF3-T 10N60KG-TF3-T TO-220F G D S Tube 10N60KL-TF1-T 10N60KG-TF1-T TO-220F1 G D S Tube 10N60KL-TF2-T 10N60KG-TF2-T TO-220F2 G D S Tube 10N60KL-TF3T-T 10N60KG-TF3T-T TO-220F3 G D S Tube 10N60KL-TQ2-T 10N60KG-TQ2-T TO-263 G D S Tube 10N60KL-TQ2-R 10N60KG-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R205-022.h  MARKING

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R205-022.h  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ± 30 V Avalanche Current (Note 2) I AR 10 A Continuous I D 10 A Drain Current Pulsed (Note 2) I DM 38 A Single Pulsed (Note 3) E AS 200 mJ Avalanche Energy Repetitive (Note 2) E AR 12 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-263 156 W Power Dissipation TO-220F/TO-220F1 TO-220F2/TO-220F3 PD 52 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 4mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W TO-220/TO-263 0.8 °C/W Junction to Case TO-220F/TO-220F1 TO-220F2/TO-220F3 θJC 2.4 °C/W

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R205-022.h  ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID= 250μA 600 V Drain-Source Leakage Current I DSS V DS=600V, VGS=0V 1 µA Forward V GS=30V, VDS=0V 100 nAGate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5A 0.63 0.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1570 2040 pF Output Capacitance C OSS 166 215 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1.0 MHz 18 24 pF SWITCHING CHARACTERISTICS Total Gate Charge Q G 33 57 nC Gate-Source Charge Q GS 9 nC Gate-Drain Charge Q GD VDS=50V, ID=1.3A, VGS=10V IG=100μA (Note1, 2) 8.5 nC Turn-On Delay Time t D(ON) 67 ns Turn-On Rise Time t R 84 ns Turn-Off Delay Time t D(OFF) 205 ns Turn-Off Fall Time t F VDD=30V, ID=0.5A, RG=25Ω, VGS=0V (Note1, 2) 95 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS=0V, IS=10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time t rr 420 ns Reverse Recovery Charge Q RR VGS=0V, IS=10A, dIF/dt=100A/µs (Note1) 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R205-022.h  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R205-022.h  TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

1 0 N 6 0 K - M T Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R205-022.h UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.