10N60G-X-TF3-T

10N60_10 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-119.E

10 Amps, 600/650 Volts

„ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F

1 TO-220F1

„ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 10N60L-x-TA3-T 10N60G-x-TA3-T TO-220 G D S Tube 10N60L-x-TF1-T 10N60G-x-TF1-T TO-220F1 G D S Tube 10N60L-x-TF3-T 10N60G-x-TF3-T TO-220F G D S Tube 10N60L-x-TQ2-R 10N60G-x-TQ2-R TO-263 G D S Tape Reel 10N60L-x-TQ2-T 10N60G-x-TQ2-T TO-263 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 10N60-A 600 V Drain-Source Voltage 10N60-B VDSS 650 V Gate-Source Voltage V GSS ± 30 V Avalanche Current (Note 2) I AR 10 A Continuous I D 10 A Drain Current Pulsed (Note 2) I DM 38 A Single Pulsed (Note 3) E AS 700 mJ Avalanche Energy Repetitive (Note 2) E AR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 156 W TO-220F/TO-220F1 50 W Power Dissipation TO-263 PD 178 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature 3. L = 14.2mH, I AS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. I SD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W TO-220 0.8 °C/W TO-220F/TO-220F1 2.5 °C/W Junction to Case TO-263 θJC 0.7 °C/W „ ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 10N60-A BV DSS V GS = 0V, ID = 250μA 600 VDrain-Source Breakdown Voltage 10N60-B BV DSS V GS = 0V, ID = 250μA 650 V Drain-Source Leakage Current I DSS V DS = 600V, VGS = 0V 1 µA Forward V GS = 30 V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 4.75A 0.6 0.73 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1570 2040 pF Output Capacitance C OSS 166 215 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1.0 MHz 18 24 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 23 55 ns Turn-On Rise Time t R 69 150 ns Turn-Off Delay Time t D(OFF) 144 300 ns Turn-Off Fall Time t F VDD=300V, ID =10A, RG =25Ω (Note 1, 2) 77 165 ns Total Gate Charge Q G 44 57 nC Gate-Source Charge Q GS 6.7 nC Gate-Drain Charge Q GD VDS=480V, ID=10A, VGS=10 V (Note 1, 2) 18.5 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time t RR 420 ns Reverse Recovery Charge Q RR VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (Ω) Reverse Drain Current, IDR (A) Gate-Source Voltage, VCG (V) Capacitance, (pF)

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E „ TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) 10-1 100 101 102 100 101 102 103 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Maximum Safe Operating Area 10μs 100μs 1ms 10ms 100ms DC Notes: 1.TC=25℃ 2.TJ=150℃ 3.Single Pulse Operation in this Area is United by RDM 0 5025 75 100 125 150 Case Temperature, TC (℃) Maximum Drain Current vs. Case Temperature Drain Current, ID (A) PDW Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 NOTES: 1.ZθJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-ZθJC(t) Square Wave Pulse Duration, t1 (sec) 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 Transient Thermal Response Curve

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 9 . E UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.