10N60 CHONGQING | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 页码 - Rev. 14-1 http:// www.perfectway.cn 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Lowgatecharge LowCiss Fastswitching 100%avalanchetested Improveddv/dtcapability TO-220AB ITO-220AB 10N60 10N60F TO-263 TO-262 10N60B 10N60H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 10N60 UNIT Drain-SourceVoltage VDSS 600 V Gate-SourceVoltage VGSS ±30 ContinuousDrainCurrent ID 10 A PulsedDrainCurrent(Note1) IDM 40 SinglePulseAvalancheEnergy(Note2) EAS 300 mJ AvalancheCurrent(Note1) IAR 10 A RepetitiveAvalancheEnergy(Note1) EAR 30 mJ ReverseDiodedV/dt(Note3) dv/dt 5.5 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in
1.1 N·m
Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 1.0 0.8 0.8 ℃/W MaximumPowerDissipation TC=25℃ PD 125 155 155 W
- 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 600 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.6 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=600V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=30V,VDS=0V － － 10 uA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-30V,VDS=0V － － -10 uA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=10,ID=250uA 2 － 4 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=5A － － 0.85 Ω Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － － 1500 pF OutputCapacitance Coss － － 180 pF ReverseTransferCapacitance Crss － － 15 pF Switching Characteristics Turn-OnDelayTime td(on) VDD=300V,ID=10A, RG=25Ω (Note4,5) － 20 － ns Turn-OnRiseTime tr － 20 － ns Turn-OffDelayTime td(off) － 55 － ns Turn-OffFallTime tf － 30 － ns TotalGateCharge Qg VDS=480V,ID=10A, VGS=10V,(Note4,5) － 60 － nC Gate-SourceCharge Qgs － 12 － nC Gate-DrainCharge Qgd － 28 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 10 A PulsedDiodeForwardCurrent ISM － － 40 A DiodeForwardVoltage VSD IS=10A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=10A, dIF/dt=100A/us, (Note4) － 600 － ns ReverseRecoveryCharge Qrr － 4.3 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=50V,starling,L=5.5mH,Rg=25Ω,IAS=10A,TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.