10N50G-TA3-T

10N50 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-531.a

10 Amps, 500 Volts

„ DESCRIPTION The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. „ FEATURES * 10A, 500V, RDS(ON)=0.61Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F1 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 10N50L-TA3-T 10N50G-TA3-T TO-220 G D S Tube 10N50L-TF1-T 10N50G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

10N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 3 1 . a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Continuous (TC=25°C) I D 10 (Note2) A Drain Current Pulsed (Note 3) IDM 40 (Note 2) A Avalanche Current (Note 3) IAR 10 A Single Pulsed (Note 4) EAS 388 mJ Avalanche Energy Repetitive (Note 5) EAR 14.3 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns TO-220 143 TC=25°C TO-220F1 48 W TO-220 1.14 Power Dissipation Derate above 25°C TO-220F1 PD

0.38 W/°C

Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width lim ited by maximum junction temperature 4. L = 7mH, I AS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. I SD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 Junction to Ambient TO-220F1 θJA 62.5 °C/W TO-220 0.87 Junction to C a s e TO-220F1 θJC 2.58 °C/W

10N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 3 1 . a „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 500 V Drain-Source Leakage Current I DSS V DS=500V, VGS=0V 1 µA Forward V GS=+30V, VDS=0V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5A 0.5 0.61 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 1610 2096 pF Output Capacitance C OSS 177 230 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 16 24 pF SWITCHING PARAMETERS Total Gate Charge Q G 43 56 nC Gate to Source Charge Q GS 7.5 nC Gate to Drain Charge Q GD VGS=10V, VDS=400V, ID=10A (Note 6, 7) 18.5 nC Turn-ON Delay Time t D(ON) 29 67 ns Rise Time t R 80 170 ns Turn-OFF Delay Time t D(OFF) 141 290 ns Fall-Time t F VDD=250V, ID=10A, RG=25Ω (Note 6, 7) 80 165 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 10 A Maximum Body-Diode Pulsed Current I SM 40 A Drain-Source Diode Forward Voltage V SD I S=10A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 50 ns Body Diode Reverse Recovery Charge Q RR IS=10A, VGS=0V, dIF/dt=100A/µs (Note 6) 0.1 µC Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 7. Essentially independent of operating temperature

10N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 3 1 . a „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

10N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 3 1 . a „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

10N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 3 1 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.