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UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 8 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R223-009.A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: V CE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K TO-126S B C E Bulk MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B TO-92 B C E Tape Box MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K TO-92 B C E Bulk MJE13003L-E-x-T92-R MJE13003G-E -x-T92-R TO-92 B C E Tape Reel
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage V CEO(SUS) 400 V Collector-Emitter Voltage V CEV 700 V Emitter Base Voltage V EBO 9 V Collector Current Continuous I C 1.5 A Peak (1) I CM 3 Base Current Continuous I B 0.75 A Peak (1) I BM 1.5 Emitter Current Continuous I E 2.25 A Peak (1) I EM 4.5 Total Power Dissipation TA=25°C TO-92 P D 1.0 Watts MW/°C TO-126S 1.4 Derate above 25°C TO-92 8 TO-126S 11.2 TC=25°C TO-92 5 Watts MW/°C TO-126S 40 Derate above 25°C TO-92 40 TO-126S 320 Junction Temperature T J 150 °C Storage Temperature T STG -65 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case TO-92 θJC 25 °C/W TO-126S 3.12 Junction to Ambient TO-92 θJA 122 °C/W TO-126S 89 Maximum Load Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds TL 275 °C Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle ≤10% 2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves – representing boundaries on device characteristics – are given to facilitate “Worst case” design.
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A ELECTRICAL CHARACTERISTICS (T C=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage V CEO(SUS) IC=10 mA , IB=0 400 Collector Cutoff Current I CEV VCEV=Rated Value, VBE(off)=1.5 V 1 VCEV=Rated Value, VBE(off)=1.5V,Tc=100°C 5 SECOND BREAKDOWN DC Current Gain hFE1 I C=0.5 A, VCE=2 V 8 40 hFE2 I C=1 A, VCE=2 V 5 25 hFE3 I C=200mA, VCE=10V 9 40 Collector-Emitter Saturation Voltage V CE(SAT) IC=0.5A, IB=0.1A 0.5 VIC=1A, IB=0.25A 2.5 IC=1.5A, IB=0.5A 3 Base-Emitter Saturation Voltage V BE(SAT) IC=0.5A, IB=0.1A 1 VIC=1A, IB=0.25 A 1.2 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f T I C=100mA, VCE=10 V, f=1MHz 4 10 MHz Output Capacitance Cob V CB=10V, IE=0, f=0.1MHz 21 pF SWITCHING CHARACTERISTICS (TABLE 1) Delay Time t d VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.1 μs Rise Time t r 0.5 1 μs Storage Time t s 2 4 μs Fall Time t f 0.4 0.7 μs INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7) Storage Time t sv IC=1A,Vclamp=300V, IB1=0.2A,VBE(off)=5V,TC=100°C 1.7 4 μs Crossover Time t c 0.29 0.75 μs Fall Time t fi 0.15 μs CLASSIFICATION OF hFE1 RANK A B C D E F RANGE 8 ~ 16 15 ~ 21 20 ~ 26 25 ~ 31 30 ~ 36 35 ~ 40
Table 2. Typical Inductive Switching Performance
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each wave form to determine the total switching time, For this reason, the following new terms have been defined. t SV=Voltage Storage Time, 90% IB1 to 10% Vclamp tRV=Voltage Rise Time, 10-90% Vclamp tFI=Current Fall Time, 90-10% IC tTI=Current Tail, 10-2% IC tC=Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT=1/2 VccIc (tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid.≒ As is common with most switching transistor, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100°C. RESISTIVE SWITCHING PERFORMANCE Tim e, t (°C) Tim e, t (°C) 0.02 Fig 3. Turn-Off Time 0.03 0.05 2 0.7 0.1 0.5 0.3 0.2 tS Vcc=125V Ic/IB=5 TJ=25°C 0.02 Fig 2. Turn-On Time 0.03 0.05 20 0.7 0.2 0.1 0.02 0.5 0.3 0.07 0.05 0.03 Vcc=125V Ic/IB=5 TJ=25°CtR td @ VBE(off)=5V tR Collector Current, IC (A)Collector Current, IC (A) r(t),EFFECTIVE TRANSIENT THERM AL RESISTANCE (NORM ALIZED)
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when Tc 25≧ °C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case tem-perature by using the appropriate curve on Figure 7. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA characteristics. Ic,COLLECTOR CURRENT (AM Fig 5. Active Region Safe Operating Area 10 500 0.5 0.2 0.01 20 50 100 200 VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS) 300 0.1 0.05 0.02 THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 10µS 100µS 1.0ms 5.0ms dc Tc=25? V,VOLTAGE (VOLTS) Fig 6. Reverse Bias Safe Operating Area 1.6 1.2 0.8 VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS) 0.4 0 100 800200 40030 0 500 600 700 VBE(off)=9V Tj? 100? IB1=1A 1.5V POW ER DERATING FACTOR Fig 7. Forward Bias Power Derating 40 60 160 0.8 0.4 0.2 80 100 120 IC, CASE TEMPERATURE (? ) 140 SECOND BREAKDOWN DERATING THERMAL DERATING
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A TYPICAL CHARACTERISTICS VCE,COLLECTOR -EM ITTER VOLTAGE (VOLTS) 0.02 Collector Saturation Region 0.05 0.01 2 1.6 1.2 0.8 0.4 IB, BASE CURRENT (AMP) Ic=0.1A0.3A 0.5A 1A 1.5A Tj=25? V,VOLTAGE (VOLTS) 0.02 Base-Emitter Voltage 0.03 0.05 2 1.4 1.2 0.8 0.6 0.4 IC, COLLECTOR CURRENT (AMP) Tj=-55°C 25°C 25°C 150°C VBE(sat)@IC/IB=3 - - - - - - VBE(on)@VCE=2V V,VOLTAGE (VOLTS) Collector-Emitter Saturation Region 0.35 0.3 0.25 0.2 0.15 IC, COLLECTOR CURRENT (AMP) IC/IB=3 0.1 0.05 IC,COLLECTOR CURRENT (? Collector Cutoff Region VBE,BASE-EMITTER VOLTAGE (VOLTS) -0.4 -0.2 +0. 6+0.20 +0.4 -1 REVERSE FORWARD VCE=250V V,VOLTAGE (VOLTS) Capacitance 500 300 200 100 VR,REVERSE VOLTAGE (VOLTS) 0.1 0.2 0.5 20015 21 0 2 0 50 100 500 1000 Cib Cob Tj=150°C 125°C 100°C 75°C 50°C 25°C Tj=-55°C 25°C 150°C hFE,DC CURRENT GAIN DC Current Gain Tj=150? 25? -55? VCE=2V - - - - - -VCE=5V IC, COLLECTOR CURRENT (AMP)
MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 9 . A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.