HGTG10N120BND INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 35A, 1200V, TC = 25oC
  • 1200V Switching SOA Capability J = 150oC
  • Short Circuit Rating
  • Low Conduction Loss Packaging JEDEC STYLE TO-247 Symbol

Ordering Information

HGTG10N120BND TO-247 10N120BND NOTE: When ordering, use the entire part number. G C E E G INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet January 2000 File Number 4579.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143| Copyright © Intersil Corporation 2000

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BND UNITS Collector Current Continuous CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. V CE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Collector to Emitter Leakage Current I CES VCE = BVCES TC = 25oC - - 250 µA TC = 125oC - 170 - µA TC = 150oC - - 2.5 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A, VGE = 15V TC = 25oC - 2.45 2.7 V TC = 150oC - 3.7 4.2 V Gate to Emitter Threshold Voltage V GE(TH) IC = 90µA, VCE = VGE 6.0 6.8 - V Gate to Emitter Leakage Current I GES VGE =±20V - - ±250 nA Switching SOA SSOA T J = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V 55 - - A Gate to Emitter Plateau Voltage V GEP IC = 10A, VCE = 0.5 BVCES - 10.4 - V On-State Gate Charge Q G(ON) IC = 10A, VCE = 0.5 BVCES VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC Current Turn-On Delay Time t d(ON)I IGBT and Diode at TJ = 25oC ICE = 10A VCE = 0.8 BVCES VGE = 15V R G = 10Ω L = 2mH Test Circuit (Figure 20) -2 3 2 6n s Current Rise Time t rI -1 1 1 5n s Current Turn-Off Delay Time t d(OFF)I - 165 210 ns Current Fall Time t fI - 100 140 ns Turn-On Energy E ON - 0.85 1.05 mJ Turn-Off Energy (Note 3) E OFF - 0.8 1.0 mJ HGTG10N120BND

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

  1. Prior to assembly into a circuit, all leads should be kept

as “ECCOSORBD™ LD26” or equivalent.

  1. When devices are removed by hand from their carriers,

means - for example, with a metallic wristband.

  1. Tips of soldering irons should be grounded.
  2. Devices should never be inserted into or removed from
  3. Gate Voltage Rating- Never exceed the gate-voltage

permanent damage to the oxide layer in the gate region.

  1. Gate Termination- The gates of these devices are
  2. Gate Protection- These devices do not have an internal

protection is required an external Zener is recommended. MAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). d(OFF)I and td(ON)I are defined in Figure 21. allowable dissipation (PD ) is defined by PD = (TJM - TC )/RθJC. OFF ; i.e., the collector current equals zero (ICE = 0). FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS ECCOSORBD  is a Trademark of Emerson and Cumming, Inc.