10N100-FL UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD 10N100-FL Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2020 Unisonic Technologies Co., Ltd QW-R205-764.A 10A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast sw itching time, low gate charge, low on-state resistance and high rugge d avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 1.9 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 10N100L-TF1-T 10N100G-TF1-T TO-220F1 G D S Tube 10N100L-TF2-T 10N100G-TF2-T TO-220F2 G D S Tube 10N100L-TF3-T 10N100G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R205-764.A ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 1000 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D 10 A Pulsed Drain Current (Note 2) I DM 20 A Avalanche Energy Single Pulsed (Note 3) E AS 158 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.84 V/ns Power Dissipation P D 37 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 5.5A, VDD = 100V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.7 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250μA 1000 V Drain-Source Leakage Current I DSS V DS=1000V, VGS=0V 10 μA Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250μA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.0A 1.9 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0MHz 1880 pF Output Capacitance C OSS 145 pF Reverse Transfer Capacitance C RSS 5.8 pF SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) Q G VDS=800V, VGS=10V, ID=10A IG=1mA (Note 1, 2) 42 nC Gate-Source Charge Q GS 17.5 nC Gate-Drain Charge Q GD 10.5 nC Turn-On Delay Time (Note 1) t D(ON) VDS=100V, VGS=10V, ID=10A, RG=25Ω (Note 1, 2) 42.4 ns Turn-On Rise Time t R 20 ns Turn-Off Delay Time t D(OFF) 84.3 ns Turn-Off Fall Time t F 34.4 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current I S 10 A Maximum Body-Diode Pulsed Current I SM 20 A Drain-Source Diode Forward Voltage (Note 1) V SD I S=10A , VGS=0V 1.4 V Reverse Recovery Time (Note 1) t rr IS=10A , VGS=0V di/dt=100A/μs 698 ns Reverse Recovery Charge Q rr 21.1 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R205-764.A TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test ISD Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R205-764.A TEST CIRCUITS AND WAVEFORMS VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R205-764.A TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R205-764.A TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R205-764.A TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.