10MQ100 IRF | Alldatasheet
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SCHOTTKY RECTIFIER 2.1 Amp 10MQ100N Bulletin PD-20520 rev. M 07/04 Major Ratings and Characteristics I F DC 2.1 A VRRM 100 V IFSM @ tp = 5 µs sine 120 A VF @ 1.5Apk, TJ=125°C 0.68 V TJ range - 55 to 150 °C Characteristics 10MQ100N Units The 10MQ100N surface mount Schottky rectifier has been de- signed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Description/ Features www.irf.com Case Styles 10MQ100N SMA IF(AV) = 2.1Amp VR = 100V
Bulletin PD-20520 rev. M 07/04 2 www.irf.com Part number 10MQ100N VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 100 Voltage Ratings VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A * See Fig. 1 0.85 V @ 1.5A
0.63 V @ 1A
0.68 V @ 1.5A IRM Max. Reverse Leakage Current (1) 0.1 mA T J = 25 °C * See Fig. 2 1 mA T J = 125 °C VF(TO) Threshold Voltage 0.52 V T J = TJ max. rt Forward Slope Resistance 78.4 m Ω CT Typical Junction Capacitance 38 pF V R = 10VDC, TJ = 25°C, test signal = 1Mhz LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR) TJ = 25 °C TJ = 125 °C VR = rated VR Electrical Specifications Parameters 10MQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% TJ Max. Junction Temperature Range (*) - 55 to 150 °C Tstg Max. Storage Temperature Range - 55 to 150 °C RthJA Max. Thermal Resistance Junction 80 °C/W DC operation to Ambient wt Approximate Weight 0.07(0.002) g (oz.) Case Style SMA Similar D-64 Device Marking IR1J Thermal-Mechanical Specifications Parameters 10MQ Units Conditions Absolute Maximum Ratings IF(AV) Max. Average Forward Current 1.5 A 50% duty cycle @ T L = 126 °C, rectangular wave form. * See Fig. 4 On PC board 9mm2 island (.013mm thick copper pad area) IFSM Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6, TJ = 25°C 30 10ms Sine or 6ms Rect. pulse EAS Non-Repetitive Avalanche Energy 1.0 mJ T J = 25 °C, IAS = 0.5A, L = 8mH IAR Repetitive Avalanche Current 0.5 A Parameters 10MQ Units Conditions A Following any rated load condition and with rated V RRM applied < thermal runaway condition for a diode on its own heatsink (*) dPtot 1 dTj Rth( j-a)
Bulletin PD-20520 rev. M 07/04 3www.irf.com Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics 0.1 I ns tantaneous F orward Current - I (A)F FM T = 150°C T = 125°C T = 25°C J J J F orward Voltage Drop - V (V) 0.0001 0.001 0.01 0.1 02 0 4 0 6 0 8 0 1 0 0 R R 125°C 100°C 75°C 50°C 25°C R evers e Current - I (mA) T = 150°CJ R evers e Voltage - V (V) 100 02 0 4 0 6 0 8 0 1 0 0 T = 25°CJ R TJunction Capacitance - C (pF ) R evers e Voltage - V (V)
Bulletin PD-20520 rev. M 07/04 4 www.irf.com Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 0.2 0.4 0.6 0.8 1.2 1.4 1.6 DC Average P ower L os s - (Watts ) F( A V) RM S Li m i t D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average F orward Current - I (A) 100 110 120 130 140 150 DC Allowable Cas e T emperature - (°C) F( A V ) se e no te ( 2) S quare wave (D = 0.50) 80% R ated V appliedR Average F orward Current - I (A) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Square Wave Pulse Duration - tp (microsec) Non - Repetitive Surge Current - I FSM (A) 100 10 100 1000 10000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge Tj = 25˚C
Bulletin PD-20520 rev. M 07/04 5www.irf.com IR LOGO YYWWX "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" 2nd digit of the YEAR SITE ID WEEK CURRENT VOLTAGE IR1J 2.50 (.098) 2.90 (.114) 4.00 (.157) 4.60 (.181) 1.40 (.055) 1.60 (.062) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 2.10 MAX. (.085 MAX. ) 5.53 (.218) 1.27 MIN. (.050 MIN.) 1.47 MIN. (.058 MIN.) SOLDERING PAD CATHODE ANODE 1 2 1 2POLARITY PART NUMBER Device Marking: IR1J Dimensions in millimeters and (inches) Outline SMA For recommended footprint and soldering techniques refer to application note #AN-994 Outline Table Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
Bulletin PD-20520 rev. M 07/04 6 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 0 7/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 1 524 3 1 - Current Rating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage Rating (100 = 100V) 5 - N = New SMA 6 - y none= Box (1000 pieces) y TR = Tape & Reel (7500 pieces) 7 y none= Standard Production y PbF = Lead-Free