10JL2C48A TOSHIBA | Alldatasheet

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TOSHIBA 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION @ Repetitive Peak Reverse Voltage : VRRM = 600V e@ Average Output Rectified Current :I9 = 10A @ Ultra Fast Reverse-Recovery Time : tyr = 35 ns (Max.) e@ Low Switching Losses and Output Noise. Unit in mm 10JL2C48A U10JL2C48A ogmax 4.32 10.3 MAX. 4.32 Pee] 4 aye { x 4 "ls 4 3 wy a 0.76 t ha Max. | = 4.6 MAX. 5 o re 2.5420.25 2:5440.25 076 S 2.54%0.25 25420.25 ° 2 58204 * ay |= [Tt Fa i aI = 3 a3 1. ANODE 1. ANODE 2. ANODE 2. ANODE 3. CATHODE 3. CATHODE JEDEC _ JEDEC _— BIAJ = TOSHIBA 12-10D1A TOSHIBA 12-10D2A MAXIMUM RATINGS POLARITY CHARACTERISTIC SYMBOL | RATING Repetitive Peak Reverse Voltage Verm | 600 | V | ° ‘Average Output Rectified Current i Peak One Cycle Surge Forward I A ® ® Current (Non-Repetitive, Sine Wave) FSM Junction Temperature —40~150 Storage Temperature Range —40~150 961001544 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-08-05 1/3

TOSHIBA 10JL2C48A,U10JL2C48A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYwBoL | TEST CONDITION Peak Forward Voltage _ (Note) Ipm = 5A [— | — [ 40] v | Repetitive Peak Reverse _ Reverse Recovery Time _(Note) Ip = 2A, di/dt = -20A/ys [| — | — | 35] ns | Junction Capacitance Vr = 10V, f = 1.0 MHz [| — | 36 | — | pF | Thermal Resistance [ Ringg [DC Total [== [25 Fer] (Note) : A value of one cell. MARKING aS oS F r 10JL2C 10JL2C48A, U10JL2C48A (H2ie3 i) [DKai Ks) Lot Number 4 l ) “8 O1O— Month (Starting from Alphabet A) LL Year (Last Number of the Christian Era) 1999-08-05 2/3

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Q oaL_LUMM TIT TTT TTI a ET “rT 10 100 1000 10000 1 10 100 TIME t (ms) REVERSE VOLTAGE VR (V) 1999-08-05 3/3