GT10J303 TOSHIBA | Alldatasheet
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 1040.3 $3.2202 2,740.2 © The 3rd Generation. a ee Fi 3 @ = Enhancement-Mode. Fd | | | 7 © High Speed. : tp=0.30/s (Max.) (Ig=10A) PT l 2 q ¢ Low Saturation Voltage. : VCE (sat) =2-7V (Max.) (I¢=10A) | é | 0750.15 2 e@ RD included between Emitter and Collector. y i) MAXIMUM RATINGS (Ta = 25°C) Pa | CHARACTERISTIC SYMBOL UNIT La [s 5 $ Collector-Emitter Voltage VcCES [ 600 | v | 1. GATE Gate-Emitter Voltage VoES 2. COLLECTOR 3. EMITTER Collector Current co _| tc JEDEC Eimiter Collector Forward Collector Power Dissipation Pi (Te=25°C) Junction Temperature Storage Temperature Range —55~150 EQUIVALENT CIRCUIT Collector Gate ae Emitter Q61001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1998-07-22 1/6
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Ices _|Vor=+20V, Von=0 | — | — | +500] na | Collector Cut-Off Current Ices _|VcE=600V, Von=0 [| — | — | 10] ma | Gate-Emitter Cut-Off Voltage | VGE (OFF) |Io=1mA, VoR=5V [50 | — | sol v | Collector-Emitter Saturation _ _ Voltage VcE (sat) |Ic=10A, VGE=15V | - | | 2.7) V Input Capacitance VcE=20V, VoE=0, f=1MHz [| — | 720] — | pr | Induetive Load | = [or2 | = | itching Ti Voo=300V, Ig=10A | — [040] — | Switching Time US Fall Time Vag=#16V, Rg=1000 =| — | 0.15 | 00| Turn-Off Time Woe PT = Toso | = | Peak Forward Voltage Ip=10A, Von=0 | — | — | 20] v | Tp=10A, di/at=—100A/s | — | — | 200] ns _| Thermal Resistance (GBT) [| Rng | | = | Tf aarfeorw (Note 1) Switching time measurement circuit and input/output waveforms Vv i { i pe i i -VGE 1 iy iy Rg pdt 9 VCE 10% 14! \\_10% 10% 1 fi N 10% ow et Fete | VCE td (of) | | iF td(on)i fy eh iit tint ! toff | !ton | Switching loss measurement waveforms v ‘ | 0 am 2h fe Cnn H Ic t " Eoff | "Eon! 1998-07-22 2/6
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SWITCHING TIME ton, tr — RG SWITCHING TIME ton, tr - IC 3 3 COMMON EMITTER 0 COMMON EMITTER [ TT 7 T ee ee 1] CFA a eee 000) —— 2 | So ER Sie Fa 2 | SSN SS 2 os ee a ———— fd | rr ee a 2 oo HN eer 2 ees 2 “UMP rT Ta. e [el ||] Tt PUT el: “SSS aS aSS Bo Ot ee 5 a BUTS [eae] a ee ed Boos He er ay a Os 3 10 30 100 300 1000 0.015 2 + $ 3 To GATE RESISTANCE Rg a COLLECTOR CURRENT Ig (A)
3 SWITCHING TIME toff, tf — RG SWITCHING TIME tof, t¢ — Ic
a eee’ (TM TNMs ELE & Iosioa a oe 1] Sr tea25°0 _—— — eee. J = Sa ites FREESE s = p=pee=- === g co g — F 05 i = £ | == [tt [ee test 03 3 2 osf {trl ee i a ce EE cS 2 errty Prt] S ——
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gz a a ses ee ee es es eee ee es | g a | Voo=t = cost tet Boos} ——}—} +1 rgsio0n
0.08 CC re 2 —— : Te=25°C
oosLLOL th Lf fff | ==: teesa8 3 10 30 100 300 1000 0.01, 2 ry e 3 70 GATE RESISTANCE Rg (0) COLLECTOR CURRENT Ig (A) i SWITCHING LOSS Eon, Eoff — RG SWITCHING LOSS Eon, Eoff - Ic SSeS Sea yp COMMON EMITTER Ree EE A Voo=300V Fae = — — 3| Yeas * Ce rrr a ee ee 8 cm10A oe | CTI Tel e (oes ee tke eer 8 | [| map [+ _—— SSS a ee ey eee a 7. Eft emeneaie] mee caree| nem sea g FS ip==Sapeoe a o.3}— {eri | 3 a gS TUFF eee lh SS SS Fy Ft Vec=300V
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1 10 30 100 300 1000 0 2 4 6 8 10 GATE RESISTANCE Rg (9) COLLECTOR CURRENT Ic (A) 1998-07-22 4/6
3000 ¢ = Vor S500 Yor, Var ~ 8G 20 Mo oo = common emer | | | YA |” = A
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© veel COMIN AI TTI 2 -\\EARR4 LY Bo 00k Sy z | | -eonsk 300 | | | 5 & ycommon i TTT LT 3 ot A WA || | tT |, 3 wo cee, UE NUTT 8 VOX TEE et 05 1 3 10 30 ~=—«100-=«800~S—«1000 ° 8 16 24 a2 40 COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE CHARGE Qq (nC) lp - Ve tery Tee — IF 20; > 50) a _ a a ee s a pag Lee ppl gM SEE" 5 ° a ecoocooyyeo eee esses see ee ae ‘EERE } EPP eee | ot Livre) | [| | 2, =as tee | 0 04 08 12 16 2.0 0 2 4 6 8 10 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) SAFE OPERATING AREA REVERSE BIAS SOA ooo 0 ono 20 [tc Max. cPuLseD x —|20me% ff tone 20] a a | |
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