10ETS08PBF VISHAY | Alldatasheet
Document overview
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Technical content
Document Number: 94337 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Input Rectifier Diode, 10 A 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors
FEATURES
- Compliant to RoHS directive 2002/95/EC
- Designed and qualified for industrial level
APPLICATIONS
- Input rectification
- Vishay Semiconductors swit ches and output rectifiers which are available in identical package outlines
DESCRIPTION
The 10ETS..PbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. PRODUCT SUMMARY VF at 10 A < 1.1 V IFSM 200 A VRRM 800 V/1200 V Anode CathodeTO-220AC Base cathode OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T A = 55 °C, TJ = 125 °C common heatsink of 1 °C/W 12.0 16.0 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Sinusoidal waveform 10 A VRRM 800/1200 V IFSM 200 A VF 10 A, TJ = 25 °C 1.1 V TJ - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 10ETS08PbF 800 900 0.5 10ETS12PbF 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) TC = 105 °C, 180° conduction half sine wave 10 AMaximum peak one cycle non-repetitive surge current I FSM 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 Maximum I2t for fusing I 2t 10 ms sine pulse, rated VRRM applied 130 A2s 10 ms sine pulse, no voltage reapplied 145 Maximum I2t for fusing I 2t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A 2s * Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 94337 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 10 A, TJ = 25 °C 1.1 V Forward slope resistance r t TJ = 150 °C 20 m Threshold voltage V F(TO) 0.82 V Maximum reverse leakage current I RM TJ = 25 °C VR = Rated VRRM 0.05 mA TJ = 150 °C 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CO NDITIONS VALUES UNITS Maximum junction and storage temperature range T J, TStg - 40 to 150 °C Maximum thermal resistance, junction to case R thJC DC operation 2.5 °C/WMaximum thermal resistance, junction to ambient (PCB mount) R thJA (1) 62 Soldering temperature T S 240 °C Approximate weight 0.07 oz. Marking device Case style TO-220AC 10ETS08 10ETS12
Document Number: 94337 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 10ETS08PbF, 10ETS12PbF High Voltage Series Input Rectifier Diode, 10 A Vishay Semiconductors Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitve Surge Current 110 100 140 150 130 120 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 2 10 124680 30° 60° 90° 120° 180° 10ETS.. Series RthJC (DC) = 2.5 °C/W Conduction angle Ø 150 140 130 120 110 100 426 8 16 1810 12 140 Maximum Allowable Case Temperature (°C) Average Forward Current (A) DC 30° 60° 90° 120° 180° 10ETS.. Series R thJC(DC) = 2.5 °C/W Ø Conduction period Maximum Average Forward Power Loss (W) Average Forward Current (A) 2468 100 180° 120° 90° 60° 30° Conduction angle Ø 10ETS.. Series T J = 150 °C RMS limit 1614121002468 Maximum Average Forward Power Loss (W) Average Forward Current (A) DC 180° 120° 90° 60° 30° RMS limit 10ETS.. Series T J = 150 °C Ø Conduction period 100 120 140 160 180 200 Peak Half Sine Wave Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 10 1001 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 10ETS.. Series At any rated load condition and with rated VRRM applied following surge. 200 100 120 140 160 180 220 240 0.1 1.00.01 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 10ETS.. Series Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 94337 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 25 °C TJ = 150 °C 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (°C/W) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady state value (DC operation) 10ETS.. Series Single pulse
Document Number: 94337 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 10ETS08PbF, 10ETS12PbF High Voltage Series Input Rectifier Diode, 10 A Vishay Semiconductors ORDERING INFORMATION TABLE LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 Part marking information www.vishay.com/doc?95224 1 - Current rating (10 = 10 A) 2 - Circuit configuration: 4 - Type of silicon: 5 - Voltage code x 100 = V RRM 6 - None = Standard production PbF = Lead (Pb)-free E = Single diode T = TO-220AC S = Standard recovery rectifier 08 = 800 V 12 = 1200 V Device code 51 32 4 6
10 E T S 12 PbF
Document Number: 95221 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 TO-220AC Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93° E 10.11 10.51 0.398 0.414 3, 6 13 2 D Q Detail B C A B L Lead tip E Ø P
0.015 A BMM
0.014 A BMM
c AA A Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220AC (6) (6) (7) (6) (7) View A - A θ E1 (6) D2 (6) Thermal padE Detail B D D 12 3 CC 2 x b2 2 x b
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