10ETF06THM3 ISC | Alldatasheet
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Technical content
FastSoftRecoveryDiode 10ETF06THM3 www.iscsemi.com
FEATURES
- GlassPassivatedPellet ChipJunction
- LowForwardVoltage Drop
- Short ReverseRecoveryTime
APPLICATIONS
- IEV/HEV BatteryChargers
- InputRectification
- ACPowerRectification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage 600 V IF(AV) AverageRectifiedForwardCurrent 10 A IFSM Non-repetitivePeakSurgeCurrent (10mssinepulse) 130 A TJ Max. JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W TO-220CPackage
FastSoftRecoveryDiode 10ETF06THM3 www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25 °Cunlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF MaximumInstantaneousForwardVoltage IF=10A -- -- 1.2 V IR MaximumInstantaneousReverseCurrent VR=VRWM -- -- 0.1 mA trr MaximumReverseRecoveryTime IF=1A, di/dt=100A/us -- -- 50 ns IF=10A, di/dt=25A/us -- -- 200 ns PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.