10ETF06PBF IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
IF(AV) Sinusoidal waveform 10 A VRRM 600 V IFSM 150 A VF @ 10 A, TJ = 25°C 1.2 V trr @ 1A, 100A/µs 50 ns TJ - 40 to 150 °C Major Ratings and Characteristics Characteristics Values Units Description/ Features The 10ETF06PbF fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. TO-220AC Package Outline Bulletin I2187 12/04 QUIETIR Series 10ETF06PbF VF < 1.2V @ 10A trr = 50ns VRRM = 600V FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free ("PbF" suffix) www.irf.com
www.irf.com IF(AV) Max. Average Forward Current 10 A @ T C = 128° C, 180° conduction half sine wave IFSM Max. Peak One Cycle Non-Repetitive 150 10ms Sine pulse, rated VRRM applied Surge Current 160 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 112.5 10ms Sine pulse, rated VRRM applied 160 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 1600 A 2√s t = 0.1 to 10ms, no voltage reapplied Part Number VRRM , maximum V RSM , maximum non repetitive I RRM peak reverse voltage peak reverse voltage 150°C VV m A 10ETF06PbF 600 700 2 Voltage Ratings Absolute Maximum Ratings Electrical Specifications Recovery Characteristics Parameters 10ETF.. Units Conditions A A2s VFM Max. Forward Voltage Drop 1.2 V @ 10A, T J = 25°C rt Forward slope resistance 23.5 m Ω TJ = 150°C VF(TO) Threshold voltage 0.85 V IRM Max. Reverse Leakage Current 0.1 T J = 25 °C
3.0 T J = 150 °C
Parameters 10ETF.. Units Conditions VR = rated VRRMmA trr Reverse Recovery Time 145 ns I F @ 10Apk Irr Reverse Recovery Current 2.75 A @ 25A/ µs Qrr Reverse Recovery Charge 0.32 µC @ 25°C S Snap Factor 0.6 Parameters 10ETF.. Units Conditions
www.irf.com TJ Max. Junction Temperature Range - 40 to 150 °C Tstg Max. Storage Temperature Range - 40 to 150 °C RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 62 °C/W to Ambient RthCS Typical Thermal Resistance, Case to 0.5 °C/W Mounting surface , smooth and greased Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220AC JEDEC Marking Device 10ETF06 Thermal-Mechanical Specifications Parameters 10ETF.. Units Conditions Kg-cm (Ibf-in) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 120 125 130 135 140 145 150 02468 1 0 1 2 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Aver age F or war d Cur rent (A) 10ET F.. S eries R (DC) = 1.5 °C/WthJC 120 125 130 135 140 145 150 02468 1 0 1 2 1 4 1 6 DC 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction P eriod Aver age F orwar d Cur rent (A) 10ETF.. S eries R (DC) = 1.5 °C/ WthJC 02468 1 0 Average F or war d Current (A) RM S Lim it Maximum Average F orward P ower L os s (W) Conduction Angle 180° 120° 90° 60° 30° 10ETF.. S eries T = 150°CJ 048 1 2 1 6 DC 180° 120° 90° 60° 30° Aver age F or ward Cur rent (A) RM S Lim it Maximum Average F orward P ower L os s (W) Conduction P eriod 10ET F.. S e ries T = 150°CJ
www.irf.com Fig. 8 - Recovery Time Characteristics, TJ = 25°C Fig. 9 - Recovery Time Characteristics, TJ = 150°C Fig. 7 - Forward Voltage Drop Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 120 140 160 1 10 100 P eak H al f S i ne Wave F orward Curr ent (A) Number Of E qual Amplitude Half Cycle Current P uls es (N) Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 10E T F .. S eries 100 120 140 160 180 0.01 0.1 1 P eak H alf Sine W ave F or ward Cur rent (A) P uls e T rain Duration (s ) Initial T = 150°C No Voltage Reapplied R ated V R eappliedRRM Vers us P uls e T rain Duration. Max imum Non R epetitive S urge Current J 10E T F .. S eries 100 0.5 1 1.5 2 2.5 3 T = 2 5 ° CJ Ins tantaneous F orward Current (A) I ns tantaneous F orward Voltage (V) T = 150°CJ 10E T F .. S eries 0.05 0.1 0.15 0.2 0 40 80 120 160 200 10 A Maximum R evers e R ecovery T ime - T rr (µ s) R ate Of F all Of F orward Current - di/dt (A/ µs ) 5 A 1 A I = 20 AFM 2 A 10E T F .. S eries T = 2 5 ° CJ 0.1 0.2 0.3 0.4 0 40 80 120 160 200 10 A Maximum R evers e R ecovery T i me - T rr (µs ) R ate Of F all Of F orward Current - di/dt (A/ µs ) 5 A 1 A I = 20 AFM 2 A 10E T F .. S eries T = 150 °CJ
www.irf.com Fig. 14 - Thermal Impedance ZthJC Characteristics Fig. 12 - Recovery Current Characteristics, TJ = 25°C Fig. 13 - Recovery Current Characteristics, T J = 150°C Fig. 10 - Recovery Charge Characteristics, TJ = 25°C Fig. 11 - Recovery Charge Characteristics, TJ = 150°C 0.2 0.4 0.6 0.8 1.2 1.4 0 40 80 120 160 200 10 A Rate Of Fall Of F orward Current - di/ dt (A/ µs) 5 A 1 A Maximum Revers e R ec overy Charge - Qrr (µC) I = 20 AFM 2 A 10ET F.. S eries T = 25 °CJ 0.5 1.5 2.5 0 40 80 120 160 200 10 A Ra te Of Fa ll Of Forw ard Current - d i/ d t (A/ µs) 5 A 1 A Maximum Reverse Rec overy Cha rge - Qrr (µC) I = 20 AFM 2 A 10ETF.. S eries T = 150 °CJ 0 40 80 120 160 200 Ra t e O f Fa ll O f Fo r w a rd C u rr e n t - d i / d t ( A / µs) Maximum R evers e Recovery Current - Irr (A) I = 20 AFM 2 A 10 A 5 A 1 A 1 0 ETF. . Se r i e s T = 2 5 ° CJ 0 40 80 120 160 200 R ate Of F all Of F orward Cur r ent - di/dt (A/µs ) Maximum R evers e R ecovery Current - Irr (A) I = 20 AFM 10 A 1 A 5 A 2 A 10E T F .. S eries T = 150 °CJ 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) thJC S ing le Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S teady S tate V al ue (DC Operation) T rans ient T hermal I mpedance Z (°C/W) 10E T F.. Series
www.irf.com 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 2.04 (0.080) MAX. Outline Table Dimensions in millimeters and inches LOT CODE ASSEMBLY RECTIFIER INTERNATIONAL IRMX Assembly Line EXAMPLE: ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" LOT CODE 1789 LOGO P = LEAD-FREE PART NUMBER WEEK 19 YEAR 1 = 2001 DATE CODE THIS IS A 10ETF06 Part Marking Information Anode 1 3 Cathode Base Cathode
www.irf.com Ordering Information Table
10 E T F 06 PbF
1 - Current Rating (10 = 10A) 2 - Circuit Configuration: E = Single Diode T = TO-220AC 4 - Type of Silicon: F = Fast Soft Recovery Rectifier 5 - Voltage Rating (06 = 600V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.