10BQ30

10BQ30 IRF | Alldatasheet

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Bulletin PD-20708 rev. F 03/03 Major Ratings and Characteristics IF(AV) Rectangular 1.0 A waveform VRRM 30 V IFSM @ tp= 5 ms sine 430 A VF @ 1.0Apk, TJ= 125°C 0.30 V TJ range - 55 to 150 °C Characteristics 10BQ030 Units The 10BQ030 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Description/ Features SMB 3.80 (.150) 3.30 (.130) 4.70 (.185) 4.10 (.161) 2.15 (.085) 1.80 (.071) 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 4.0 (.157) 2.0 TYP. (.079 TYP.) 2.5 TYP. (.098 TYP.) SOLDERING PAD CATHODE ANODE 1 2 1 2POLARITY PART NUMBER 4.2 (.165) Device Marking: IR1E Dimensions in millimeters and (inches) Outline SMB www.irf.com For recommended footprint and soldering techniques refer to application note #AN-994

Bulletin PD-20708 rev. F 03/03 2 www.irf.com Part number 10BQ030 VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 30 Voltage Ratings VFM Max. Forward Voltage Drop (1) 0.420 V @ 1A

0.470 V @ 2A

VFM Max. Forward Voltage Drop (1) 0.300 V @ 1A

0.370 V @ 2A

0.5 mA T J = 25 °C IRM Max. Reverse Leakage Current (1) 5.0 mA T J = 100 °C 15 mA T J = 125 °C CT Max. Junction Capacitance 200 pF V R = 5VDC, (test signal range 100KHz to 1Mhz) 25°C LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR) TJ = 25 °C TJ = 125 °C VR = rated VR Electrical Specifications Parameters 10BQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% TJ Max. Junction Temperature Range (*) - 55 to 150 °C Tstg Max. Storage Temperature Range - 55 to 150 °C RthJL Max. Thermal Resistance Junction 25 °C/W DC operation to Lead (**) RthJA Max. Thermal Resistance Junction 80 °C/W to Ambient wt Approximate Weight 0.10 (0.003) g (oz.) Case Style SMB Similar DO-214AA Device Marking IR1E Thermal-Mechanical Specifications Parameters 10BQ Units Conditions Absolute Maximum Ratings IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ T L = 106 °C, rectangular wave form. IFSM Max. Peak One Cycle Non-Repetitive 430 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 90 10ms Sine or 6ms Rect. pulse E AS Non-Repetitive Avalanche Energy 3.0 mJ T J = 25 °C, IAS = 1A, L = 6mH IAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. Va = 1.5 x Vr typical Parameters 10BQ Units Conditions Following any rated load condition and with rated VRRM applied < thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB (*) dPtot 1 dTj Rth( j-a)

Bulletin PD-20708 rev. F 03/03 3www.irf.com Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 1000 01 0 2 0 3 0 R TJunction Capacitance - C (pF ) R evers e Voltage - V (V) T = 2 5° CJ 0.1 00 . 2 0 . 4 0 . 6 0 . 8 F FM F orward Voltage Drop - V (V) Ins tantaneous F orward Current - I (A) T = 125°C T = 2 5 ° C J J 0.0001 0.001 0.01 0.1 01 0 2 0 3 0 R R 100°C 75°C 50°C 25°C R evers e Current - I (mA) T = 125°CJ R everse Voltage - V (V)

Bulletin PD-20708 rev. F 03/03 4 www.irf.com Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 100 1000 10 100 1000 10000 FSMNon-R epetitive S urge Current - I (A) p At Any R ated L oad Condition And With R ated V Applied Fo llo w in g Su rg e RRM S quare Wave Pulse Duration - t (microsec) 100 110 120 130 00 . 4 0 . 8 1 . 2 1 . 6 DC Allowable Cas e T emperature - (°C) F( A V) se e note ( 2) Average F orward Current - I (A) S quare wave (D = 0.50) 80% R ated V appli edR D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.1 0.2 0.3 0.4 0.5 00 . 4 0 . 8 1 . 2 1 . 6 DC Average P ower L os s - (Watts ) F( A V ) RM S Lim it D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average F orward Current - I (A)

Bulletin PD-20708 rev. F 03/03 5www.irf.com IR LOGO YEAR CURRENT IR1E VOLTAGE YYWWX WEEK SITE ID Tape & Reel Information Dimensions in millimetres and (inches) Marking & Identification Ordering Information 10BQ SERIES - TAPE AND REEL WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 3000 PIECES). EXAMPLE: 10BQ030TR - 6000 PIECES 10BQ SERIES - BULK QUANTITIES WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 1000 PIECES). EXAMPLE: 10BQ030 - 2000 PIECES Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier as indicated by the letters "IR", and the Part Number (indicates the current and the voltage rating). The second row indicates the year, the week of manufacturing and the Site ID.

Bulletin PD-20708 rev. F 03/03 6 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.