10BQ200 SMC | Alldatasheet

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Technical content

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200 10BQ200 SCHOTTKY RECTIFIER Applications:
  • Disk Drives
  • Switching power supply
  • Redundant power subsystems
  • Converters
  • Free-Wheeling diodes
  • Reverse battery protection
  • Battery Charging Features:
  • Small foot print, surface moutable
  • Low forward voltage drop
  • High frequency operation
  • Guard ring for enhanced ruggedness and long term reliability
  • This is a Pb − Free Device
  • All SMC parts are traceable to the wafer lot
  • Additional testing can be offered upon request Mechanical Dimensions: In mm OPTION 1

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200 OPTION 2(JK) SMB

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200 Marking Diagram: Where XXXXX is YYWWL SB1N = Part Name YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping 10BQ200 SMB (Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 200 V Max. Average Forward Current I F(AV) 50% duty cycle @TL =105°C, rectangular wave form On PC board 9mm2 island 1.0 A Max. Peak One Cycle Non- Repetitive Surge Current (per leg) IFSM 10 ms, half Sine pulse 20 A

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200 Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop* V F1 @ 1 A, Pulse, T J = 25 °C 0.92 V V F2 @ 1 A, Pulse, T J = 125 °C 0.76 V Max. Reverse Current * I R1 @V R = Rated VR, Pulse, TJ = 25 °C 0.5 mA I R2 @V R = Rated VR, Pulse, TJ = 125 °C 1.0 mA Max. Junction Capacitance CT @V R = 5V, TC = 25 °C fSIG = 1MHz 20 PF Typical Series Inductance LS Measured lead to lead 5 mm from package body 2.0 nH Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature T J - -55 to +175 °C Max. Storage Temperature T stg - -55 to +175 °C Maximum Thermal Resistance Junction to Case RθJA DC operation 140 °C/W Approximate Weight wt - 0.68 g Case Style SMB

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200

Technical Data Green Products Data Sheet N0648, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 10BQ200 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..