10BQ40 IRF | Alldatasheet
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Bulletin PD-2.397 rev. G 07/04 1www.irf.com Major Ratings and Characteristics IF(AV) Rectangular waveform 1.0 A VRRM 40 V IFSM @ tp = 5 µs sine 430 A VF @ 1.0 Apk, TJ=125°C 0.49 V TJ range - 55 to 150 °C Characteristics 10BQ040 Units The 10BQ040 surface-mount Schottky rectifier has been de- signed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Description/ Features Case Styles 10BQ040 SMB IF(AV) = 1 Amp VR = 40V
Bulletin PD-2.397 rev. G 07/04 2 www.irf.com VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 40 Voltage Ratings VFM Max. Forward Voltage Drop (1) 0.53 V @ 1A * See Fig. 1 0.70 V @ 2A
0.49 V @ 1A
0.64 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.1 mA T J = 25 °C * See Fig. 2 4 mA T J = 125 °C CT Typical Junction Capacitance 80 pF V R = 5VDC, (test signal range 100kHz to 1MHz) 25°C LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Volatge Rate of Charge 10000 V/ µs (Rated VR) TJ = 25 °C TJ = 125 °C VR = rated VR Electrical Specifications Parameters 10BQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ T L = 112 °C, rectangular wave form IFSM Max. Peak One Cycle Non-Repetitive 430 A 5µs Sine or 3µs Rect. pulse Surge Current 45 10ms Sine or 6ms Rect. pulse EAS Non- Repetitive Avalanche Energy 3.0 mJ T J = 25 °C, IAS = 1A, L = 6mH IAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. Va = 1.5 x Vr typical Parameters 10BQ Units Conditions Absolute Maximum Ratings Following any rated load condition and with rated VRRM applied Part number 10BQ040 TJ Max. Junction Temperature Range (*) - 55 to 150 °C Tstg Max. Storage Temperature Range - 55 to 150 °C RthJL Max. Thermal Resistance Junction 36 °C/W DC operation to Lead () RthJA Max. Thermal Resistance Junction 80 °C/W to Ambient wt Approximate Weight 0.10 (0.003) g (oz.) Case Style SMB Similar DO-214AA Device Marking IR1F Thermal-Mechanical Specifications Parameters 10BQ Units Conditions < thermal runaway condition for a diode on its own heatsink () Mounted 1 inch square PCB (*) dPtot 1 dTj Rth( j-a)
Bulletin PD-2.397 rev. G 07/04 3www.irf.com Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics Instantaneous Forward Current - I F (A) Forward Voltage Drop - VFM (V) Reverse Current - I R (mA) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (p F) Thermal Impedance Z thJC (°C/W) t1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg) 0.1 0.2 0.4 0.6 0.8 1 Tj = 150˚C Tj = 125˚C Tj = 25˚C 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 35 40 75˚C 25˚C 125˚C 100˚C 50˚C Tj = 150˚C 100 1000 0 1 02 03 04 0 T = 25˚CJ 0.1 100 Single Pulse (Thermal Resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM Notes: 1. Duty factor D = t1/ t2 . 2. Peak Tj = Pdm x ZthJC + Tc .
Bulletin PD-2.397 rev. G 07/04 4 www.irf.com Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR Average Forward Current - I F(AV) (A) Allowable Lead Temperature (°C) Average Forward Current - I F(AV) (A) Average Power Loss (Watts) Square Wave Pulse Duration - Tp (Microsec) Non-Repetitive Surge Current - I FSM (A) 100 110 120 130 140 150 160 0 0.4 0.8 1.2 1.6 DC Square wave (D = 0.50) Rated Vr applied see note (2) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.2 0.4 0.6 0.8 DC RMS Limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 1000 10 100 1000 10000 At Any Rated Load Condition And With rated Vrrm Applied Following Surge
Bulletin PD-2.397 rev. G 07/04 5www.irf.com 3.80 (.150) 3.30 (.130) 4.70 (.185) 4.10 (.161) 2.15 (.085) 1.80 (.071) 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 4.0 (.157) 2.0 TYP. (.079 TYP.) 2.5 TYP. (.098 TYP.) SOLDERING PAD CATHODE ANODE 1 2 1 2POLARITY PART NUMBER 4.2 (.165) IR LOGO YYWWX "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" 2nd digit of the YEAR SITE ID WEEK CURRENT VOLTAGE IR1F Device Marking: IR1F Dimensions in millimeters and (inches) Outline SMB For recommended footprint and soldering techniques refer to application note #AN-994 Outline Table Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
Bulletin PD-2.397 rev. G 07/04 6 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 0 7/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 1 524 3 1 - Current Rating 2 - B = Single Lead Diode 3 - Q = Schottky Q Series 4 - Voltage Rating (040 = 40V) 5 - y none= Box (1000 pieces) y TR = Tape & Reel (3000 pieces) 6 y none= Standard Production y PbF = Lead-Free