EMIF03-SIM01F2 STMICROELECTRONICS | Alldatasheet
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Technical content
MAIN PRODUCT APPLICATIONS: EMI filtering and ESD protection for: ■ SIM Interface (Subscriber Identify Module) ■ UIM Interface (Universal Identify Module)
DESCRIPTION
The EMIF03-SIM01F2 is a highly integrated devices designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interfer- ences. The EMIF03 flip chip packaging means the package size is equal to the die size. This filter includes an ESD protection circuitry which prevents the device from destruction when subjected to ESD surges up 15kV. BENEFITS ■ EMI symmetrical (I/O) low-pass filter ■ High efficiency in EMI filtering ■ Lead free package ■ Very low PCB space consuming: 1.42mm x 1.42mm ■ Very thin package: 0.65 mm ■ High efficiency in ESD suppression ■ High reliability offered by monolithic integration ■ High reducing of parasitic elements through integration & wafer level packaging. COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 15kV (air discharge) 8kV (contact discharge) MIL STD 883E - Method 3015-6 Class 3 EMIF03-SIM01F2
3 LINES EMI FILTER
REV. 2December 2004 Figure 2: Configuration 47 Ω CLK in Data in CLK out Data out 100 Ω RST in RST out 100 Ω VCC GND Cline = 35pF max. Flip-Chip (8 Bumps) Figure 1: Pin Configuration (Ball side) B C 123 ARST in RST out CLT in Data in Gnd VCC CLT out Data out TM: IPAD is a trademark of STMicroelectronics. Table 1: Order Code Part Number Marking EMIF03-SIM01F2 FC IPAD™
Table 2: Absolute Ratings (limiting values) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6V IRM VRM = 3V per line 1µ A Rd 1.5 Ω R1 95 100 105 Ω R2 44.65 47 49.35 Ω R3 95 100 105 Ω Cline @ 0V 35 pF Figure 3: S21 (dB) attenuation measurement Figure 4: Analog crosstalk measurements Aplac 7.60 User: STMicroelectronics Feb 22 2001 -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 dB f/Hz B3_B1(CLK) A3_A2(RST) C3_C1(DAT) dB MHz I V IF IRM IR IPP VRM VF VBRVCL
Figure 9: Aplac model sub 50p 0.05 0.08nH 0.1 DEMIF03 diodes Model - RS = 1.2 - CJO = 17p - M = 0.3333 - VJ = 0.6 - ISR = 100p - BV = 6.8 - IBV = 1m - TT = 100n Rseries = 47R (CLK line) = 100R (RST & Data lines) DEMIF03_Vcc diode Model - RS = 1.5 - CJO = 20p - M = 0.3333 - VJ = 0.6 - ISR = 100p - BV = 6.8 - IBV = 1m - TT = 100n Rseries sub Port1 Port2 MODEL = demif03 MODEL = demif03 MODEL = demif03_Vcc sub Vcc
Figure 14: FLIP-CHIP Tape and Reel Specification Dot identifying Pin A1 location User direction of unreelingAll dimensions in mm 4 +/- 0.1 8 +/- 0.3 4 +/- 0.1 0.73 +/- 0.05 xxzyww ST E xxzyww ST E xxzyww ST E Table 4: Ordering Information Note: More informations are available in the application notes: AN1235: “Flip-Chip: Package description and recommendations for use” AN1751: "EMI Filters: Recommendations and measurements" Ordering code Marking Package Weight Base qty Delivery mode EMIF03-SIM01F2 FC Flip-Chip 2.9 mg 5000 Tape & reel 7” Table 5: Revision History Date Revision Description of Changes 08-Oct-2004 1 First issue 13-Dec-2204 2 Table 4 on page 6: Flip-Chip weight corrected from 3.3 mg to 2.9 mg.
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