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GaAs, Nonreflective, SP4T Switch
100 MHz to 4 GHz
Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com
FEATURES
Broadband frequency range: 100 MHz to 4 GHz Nonreflective 50 Ω design Low insertion loss: 0.7 dB at 2 GHz High isolation: 43 dB at 2 GHz High input linearity at 250 MHz to 4 GHz 1 dB compression (P1dB): 29 dBm typical Third order intercept (IP3): 47 dBm typical High power handling 28.5 dBm through path 25 dBm terminated path Single positive supply: 3 V to 5 V Integrated 2 to 4 line decoder 16-lead, 3 mm × 3 mm LFCSP package ESD rating: 250 V (Class 1A) Pin compatible with the HMC7992
APPLICATIONS
Cellular/4 G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment FUNCTIONAL BLOCK DIAGRAM 4 9 RF4 NIC NIC RF3 RF1 NIC GND RFC GND NIC NIC RF2 GND PACKAGE BASE VDD B A 2:4 TTL DECODER HMC241ALP3E 16215-001 Figure 1. GENERAL DESCRIPTION The HMC241ALP3E is a general-purpose, nonreflective,
100 MHz to 4 GHz single-pole, four-throw (SP4T) switch
manufactured using a gallium arsenide (GaAs) process. This switch offers high isolation of 43 dB typical at 2 GHz, low insertion loss of 0.7 dB at 2 GHz, and on-chip termination of the isolated ports. The on-chip circuitry allows the HMC241ALP3E to operate at a single, positive supply voltage range of 3 V to 5 V . This switch requires two positive logic control voltages. The HMC241ALP3E includes an on-chip, binary two to four line decoder that provides logic control from two logic input lines to select one of the four radio frequency (RF) lines. The HMC241ALP3E is available in a 3 mm × 3 mm, 16-lead LFCSP package. The HMC7992 is the silicon version of this switch and features better performance up to higher frequencies.
Rev. C | Page 2 of 11 TABLE OF CONTENTS Input Power Compression and Third-Order Intercept (IP3) ..7
REVISION HISTORY
8/2018—Rev. B to Rev. C Changed Reflow Temperature (MSL1 Rating) to Reflow 11/2017—Rev. A to Rev. B This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Changes to Features, Applications, and General Description .... 1
Rev. C | Page 3 of 11 SPECIFICATIONS VDD = 3 V or 5 V, VCTRL = 0 V or VDD, TCASE = 25°C, 50 Ω system, unless otherwise noted. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE f 0.1 4 GHz INSERTION LOSS Between RFC and RF1 to RF4 (On) 100 MHz to 1 GHz 0.6 0.9 dB 1 GHz to 2 GHz 0.7 1.0 dB 2 GHz to 2.5 GHz 0.9 1.2 dB 2.5 GHz to 4 GHz 1.2 1.5 dB ISOLATION Between RFC and RF1 to RF4 (Off ) 100 MHz to 1 GHz 40 45 dB
1 GHz to 2 GHz 38 43 dB
2 GHz to 2.5 GHz 35 41 dB
2.5 GHz to 4 GHz 25 32 dB
RFC and RF1 to RF4 (On) 100 MHz to 2.5 GHz 18 dB
2.5 GHz to 4 GHz 12 dB
RF1 to RF4 (Off ) 100 MHz to 4 GHz 12 dB SWITCHING 250 MHz to 4 GHz Rise and Fall Time tRISE, tFALL 10 % to 90 % of RF output 30 ns On and Off Time tON, tOFF 50 % VCTL to 90 % of RF output 100 ns INPUT LINEARITY1 250 MHz to 4 GHz 1 dB Power Compression P1dB VDD = 3 V 24 dBm VDD = 5 V 23 29 dBm Third-Order Intercept IP3 10 dBm per tone, 1 MHz spacing VDD = 3 V 50 dBm VDD = 5 V 47 dBm SUPPLY VDD pin Voltage VDD 3 5 V Current IDD 2.5 5 mA DIGITAL CONTROL INPUTS CTRLA and CTRLB pins Voltage VCTL Low VINL VDD = 3 V 0 0.8 V VDD = 5 V 0 0.8 V High VINH VDD = 3 V 2 3 V VDD = 5 V 2 5 V Current Low IINL 0.2 µA High IINH 40 µA 1 Input linearity performance degrades at frequencies less than 250 MHz.
Rev. C | Page 4 of 11 ABSOLUTE MAXIMUM RATINGS For recommended operating conditions, see Table 1. Table 2. Parameter Rating Positive Supply Voltage (VDD) 7 V Digital Control Input Voltage −0.5 V to VDD +1 V RF Input Power (f = 100 MHz to 4 GHz, TCASE = 85°C) VDD = 3 V Through Path 23.5 dBm Terminated Path 20 dBm Hot Switching 17.5 dBm VDD = 5 V Through Path 28.5 dBm Terminated Path 25 dBm Hot Switching 22.5 dBm Junction Temperature, TJ 150°C Storage Temperature Range −65°C to +150°C Reflow Temperature 260°C Junction to Case Thermal Resistance, θJC Through Path 144°C/W Terminated Path 300°C/W Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) 250 V (Class 1A) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION
control the state of the RF paths.
- Power up the digital control inputs. The relative order of the
- Apply an RF input signal. The design is bidirectional; the
Table 4. Control Voltage Truth Table
0.05 MAX
0.02 NOM
0.203 REF
0.20 MIN
Figure 17. 16-Terminal Lead Frame Chip Scale Package [LFCSP] 1 All models are RoHS compliant. registered trademarks are the property of their respective owners.