1035MP ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Marcus Sucro
- PDF pages: 2
Technical content
35 Watts, 50 Volts
The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low therm al resistance package reduces junction temperature, extends life. CASE OUTLINE 55FW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 125 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 2.5 Am ps Pk Maximum Temperatures Storage Temperature - 65 to + 150oC Operating Junction Temperature + 200oC ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS POUT Power Out F= 1025-1150 MHz 35 W PIN Power Input Vcc = 50 Volts 3.5 W PG Power Gain PW = 10 µsec, DF = 1% 10 10.5 dB ηc Efficiency 45 % VSWR Load Mismatch Tolerance F = 1090 MHz 10:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 15mA 65 V Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20 Cob Output Capacitance Vcb = 50 V, f = 1 MHz 17 20 pF θjc2 Thermal Resistance 1.4 oC/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue December 6, 1995 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.